2Xn surface structure of SiGe layers deposited on Si(100)

Butz, R.; Kampers, S.
September 1992
Applied Physics Letters;9/14/1992, Vol. 61 Issue 11, p1307
Academic Journal
Examines the surface structure of silicon germanide (SiGe) layers deposited on Si (100). Transformation of the 2X1 surface into the 2Xn structure in low energy electron diffraction; Evidence of dimer loss by scanning tunneling microscopy; Dependence of missing dimer density on the Ge content and layer thickness.


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