Silicon epitaxy from silane by atmospheric-pressure chemical vapor deposition at low temperatures

Agnello, P.D.; Sedgwick, T.O.
September 1992
Applied Physics Letters;9/14/1992, Vol. 61 Issue 11, p1298
Academic Journal
Examines silicon epitaxy from silane using atmospheric-pressure chemical vapor deposition at low temperature. Capabilities of the low-temperature atmospheric-pressure growth apparatus; Analysis on the doping levels and pulses; Observation of the diminished growth rate and degradation of crystal quality layers; Data on the oxygen levels at film interface.


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