TITLE

Role of Coulomb repulsion in 4f orbitals in electrical excitation of rare-earth impurities in

AUTHOR(S)
Tiedje, T.; Colbow, K.M.
PUB. DATE
September 1992
SOURCE
Applied Physics Letters;9/14/1992, Vol. 61 Issue 11, p1296
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the role of on-site Coulomb repulsion energy in the electrical excitation of rare-earth ions using minority carrier injection in semiconductors. Analysis on the interfacial electronic energy level alignment; Importance of preventing the direct excitation of 4f levels; Technological applications of rare-earth doped semiconductors.
ACCESSION #
4217939

 

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