Role of Coulomb repulsion in 4f orbitals in electrical excitation of rare-earth impurities in

Tiedje, T.; Colbow, K.M.
September 1992
Applied Physics Letters;9/14/1992, Vol. 61 Issue 11, p1296
Academic Journal
Examines the role of on-site Coulomb repulsion energy in the electrical excitation of rare-earth ions using minority carrier injection in semiconductors. Analysis on the interfacial electronic energy level alignment; Importance of preventing the direct excitation of 4f levels; Technological applications of rare-earth doped semiconductors.


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