Epitaxial growth of TiN films on (100) silicon substrates by laser physical vapor deposition

Narayan, J.; Tiwari, P.
September 1992
Applied Physics Letters;9/14/1992, Vol. 61 Issue 11, p1290
Academic Journal
Examines the epitaxial growth of titanium nitride (TiN) films on (100) silicon (Si) substrates using the pulsed laser physical vapor deposition method. Techniques employed to characterize TiN films; Analysis of the TiN films channeling yield; Evidence of the metallic behavior of films by four-point-probe measurements; Implication of the growth on Si device fabrication.


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