TITLE

Epitaxial growth of TiN films on (100) silicon substrates by laser physical vapor deposition

AUTHOR(S)
Narayan, J.; Tiwari, P.
PUB. DATE
September 1992
SOURCE
Applied Physics Letters;9/14/1992, Vol. 61 Issue 11, p1290
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the epitaxial growth of titanium nitride (TiN) films on (100) silicon (Si) substrates using the pulsed laser physical vapor deposition method. Techniques employed to characterize TiN films; Analysis of the TiN films channeling yield; Evidence of the metallic behavior of films by four-point-probe measurements; Implication of the growth on Si device fabrication.
ACCESSION #
4217937

 

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