TITLE

High-power spatially coherent operation of unstable resonator semiconductor lasers with regrown

AUTHOR(S)
Srinivasan, Swaminathan T.; Schaus, Christian F.
PUB. DATE
September 1992
SOURCE
Applied Physics Letters;9/14/1992, Vol. 61 Issue 11, p1272
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines a high-power spatially coherent operation in wide-stripe InGaAs/GaAs/AlGaAs semiconductor lasers using a monolithic unstable resonator. Involvement of metalorganic chemical vapor deposition following wet-chemical etching of lens-like patterns; Components of the monolithic unstable resonator; Analysis of the lateral mode discrimination.
ACCESSION #
4217918

 

Related Articles

  • Strained InAs/InP quantum well heterostructure lasers grown by low-pressure metalorganic.... Xing, Q.J.; Brebner, J.L. // Applied Physics Letters;8/1/1994, Vol. 65 Issue 5, p567 

    Investigates strained quantum well heterostructure lasers grown by low-pressure metalorganic chemical vapor deposition. Measurement of the lasing characteristics using pulsed excitation; Determination of the characteristic temperature T[sub o] of the strained-layer laser devices;...

  • Epitaxial surface-emitting laser a lattice-mismatched substrate. Gourley, P.L.; Fritz, I.J. // Applied Physics Letters;4/27/1992, Vol. 60 Issue 17, p2057 

    Demonstrates the continuous-wave operation of a vertical-cavity surface-emitting laser on a lattice-mismatched gallium arsenide substrate. Effect of the mismatch in designing resonators with lasing wavelengths; Components of the laser resonator; Percentage of the differential power efficiency;...

  • Enhanced thermal stability of single longitudinal mode coupled cavity lasers. Andrews, John R. // Applied Physics Letters;7/15/1985, Vol. 47 Issue 2, p71 

    Thermally induced changes in the length of the external resonator in a three-mirror coupled cavity laser can enhance the temperature range for single longitudinal mode operation. The enhancement occurs when the length of the external resonator is altered to track the change in the effective...

  • Etch and CVD process improvements via heated vacuum throttle valves. Goodman, Dan; Pewsey, Shaun // Solid State Technology;Dec2000, Vol. 43 Issue 12, p80 

    Focuses on the use of heated throttle valves in etching and chemical vapor deposition wafer fabrication processes. Effects of the buildup of solid byproducts on the process system; Problems with the throttling valve used for downstream pressure control; Development of a method for heating the...

  • Influences of damage and contamination from reactive ion etching on selective tungsten deposition in a low-pressure chemical-vapor-deposition reactor. Chang, Kow-Ming; Yeh, Ta-Hsun; Wang, Shih-Wei; Li, Chii-Horng // Journal of Applied Physics;9/1/1996, Vol. 80 Issue 5, p3056 

    Discusses a study which investigated the influences of reactive ion etching on selective tungsten deposition in a low-pressure chemical vapor deposition reactor. Theoretical background; Methodology; Findings.

  • The Precision 5000 story. Morgan, James C.; Maydan, Dan // Solid State Technology;May97, Vol. 40 Issue 5, p117 

    Traces the history of the Precision 5000 family of chemical vapor deposition and etch systems for semiconductor manufacturing. Inventors; Commercialization by Applied Materials in 1986; Emergence of competitors.

  • Table-top 50-W laser system for ultra-fast laser ablation. Luther-Davies, B.; Kolev, V. Z.; Lederer, M. J.; Madsen, N. R.; Rode, A. V.; Giesekus, J.; Du, K.-M.; Duering, M. // Applied Physics A: Materials Science & Processing;2004, Vol. 79 Issue 4-6, p1051 

    We have built a mode-locked Nd:YVO4 laser with a very long resonator which produces an average power of 50 W in 13-ps pulses at 1064 nm and was designed for applications in micro-machining, the deposition of optical thin films, and the growth of nano-clusters in the laser-ablated plumes. By...

  • Properties of AlGaAs buried heterostructure lasers and laser arrays grown by a two-step metalorganic chemical vapor deposition. Welch, D. F.; Cross, P. S.; Scifres, D. R.; Streifer, W.; Burnham, R. D. // Applied Physics Letters;6/23/1986, Vol. 48 Issue 25, p1716 

    High quality buried heterostructure (BH) lasers were grown by a two-step metalorganic chemical vapor deposition. Single stripe BH lasers exhibited thresholds of 20 mA for a 1.2-μm stripe. The spectral output emits in a single transverse and longitudinal mode up to 15 mW, with a side lobe...

  • Ethyldimethylindium for the growth of InGaAs-GaAs strained-layer lasers by metalorganic chemical vapor deposition. York, P. K.; Beernink, K. J.; Kim, J.; Coleman, J. J.; Fernández, G. E.; Wayman, C. M. // Applied Physics Letters;12/11/1989, Vol. 55 Issue 24, p2476 

    The growth and characterization of strained In0.25Ga0.75As-GaAs-Al0.20Ga0.80As quantum well lasers grown by metalorganic chemical vapor deposition using ethyldimethylindium (EDMIn) are described. A vapor pressure of 0.56 Torr at 11 °C has been extracted from the growth rates of thin InGaAs...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics