TITLE

Influence of AIN nucleation layers on growth mode and strain relief of GaN grown on 6H - SiC (0001)

AUTHOR(S)
Waltereit, P.; Brandt, O.
PUB. DATE
June 1999
SOURCE
Applied Physics Letters;6/14/1999, Vol. 74 Issue 24, p3660
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Studies the growth mode and strain state of gallium nitride (GaN) layers grown either directly on 6H-SiC(0001) or on thin, coherently strained aluminum nitride nucleation layers. Compressive lattice mismatch strain; Strain state of the GaN layer determined by its growth mode; High-energy electron diffraction; Transmission electron microscopy.
ACCESSION #
4211706

 

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