Low-temperature solid phase heteroepitaxial growth of Ge-rich Si[sub x]Ge[sub 1-x] alloys on

Ma, Z.; Xu, Y.
July 1992
Applied Physics Letters;7/13/1992, Vol. 61 Issue 2, p225
Academic Journal
Investigates the process of germanium-rich silicon germanide alloys heteroepitaxial growth on silicon. Utilization of a low-temperature solid-phase heteroepitaxial growth technique in the study; Presence of stacking faults and microtwins on films grown on silicon; Growth of germanium epitaxially to the substrate.


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