Electrical profiling of Si(001) p-n junctions by scanning tunneling microscopy

Yu, E.T.; Johnson, M.B.
July 1992
Applied Physics Letters;7/13/1992, Vol. 61 Issue 2, p201
Academic Journal
Investigates the potential distribution across silicon(001) semiconductor p-n junctions. Utilization of cross-sectional scanning tunneling microscopy in the analysis; Detection of the variations in the energy of the conduction-band edge; Measurement of the current-voltage characteristics of the p-n junctions.


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