Negative output differential resistance in AlGaAs/GaAs heterojunction bipolar transistors

Gao, G.B.; Fan, Z.F.
July 1992
Applied Physics Letters;7/13/1992, Vol. 61 Issue 2, p198
Academic Journal
Presents a thermal-electrical model describing the negative differential resistance in aluminum gallium arsenide (AlGaAs) and gallium arsenide (GaAs) heterojunction bipolar transistors. Inclusion the base band-gap shrinkage in the model; Examination of the temperature dependence of AlGaAs and GaAs band gaps; Presentation of the valence band discontinuity.


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