Heavy carbon doping of GaAs grown by solid-source molecular beam epitaxy

Giannini, C.; Fischer, A.
July 1992
Applied Physics Letters;7/13/1992, Vol. 61 Issue 2, p183
Academic Journal
Investigates the heavy carbon doping of gallium arsenide lattice grown by solid-source molecular-beam epitaxy. Determination of the fraction of carbon incorporated in arsenic sites acting as acceptors; Utilization of Hall effect measurements in the study; Presence of compensation at the highest doping levels of 5x10[sup 19] per cubic centimeter.


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