TITLE

Formation of two-dimensional arsenic-precipitate arrays in GaAs

AUTHOR(S)
Melloch, M.R.; Otsuka, N.
PUB. DATE
July 1992
SOURCE
Applied Physics Letters;7/13/1992, Vol. 61 Issue 2, p177
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the formation of two-dimensional arsenic-precipitate arrays in gallium arsenide. Percentage of excess arsenic in the epilayer; Presence of regions delta doped with silicon (Si), beryllium (Be) and indium (In); Examination of the effects of Si, Be, and In impurities on the precipitate of the excess arsenic.
ACCESSION #
4208693

 

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