Formation of two-dimensional arsenic-precipitate arrays in GaAs

Melloch, M.R.; Otsuka, N.
July 1992
Applied Physics Letters;7/13/1992, Vol. 61 Issue 2, p177
Academic Journal
Investigates the formation of two-dimensional arsenic-precipitate arrays in gallium arsenide. Percentage of excess arsenic in the epilayer; Presence of regions delta doped with silicon (Si), beryllium (Be) and indium (In); Examination of the effects of Si, Be, and In impurities on the precipitate of the excess arsenic.


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