Dopant-induced disordering of annealed AlGaAs heterostructures

Ryenolds Jr., C.L.; Geva, M.
July 1992
Applied Physics Letters;7/13/1992, Vol. 61 Issue 2, p165
Academic Journal
Investigates the impurity-induced layer disordering of annealed aluminum gallium arsenide heterostructures. Presence of sharp interfaces in the aluminum profile; Existence of considerable differences in the wafer portion annealing; Effect of the resultant shift in Fermi level on the charged defect concentration.


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