Investigations of laser array for optical data link applications

Dutta, N.K.; Wang, S.J.
July 1992
Applied Physics Letters;7/13/1992, Vol. 61 Issue 2, p130
Academic Journal
Investigates laser array for parallel optical data link applications. Utilization of multiquantum-well active region, short cavity length, and high reflectivity facet coatings in laser fabrication; Absence of crosstalk during the modulation of the array adjacent elements; Operation of the laser-array transmitter utilizing the laser without prebias.


Related Articles

  • Quantum noise and dynamics in quantum well and quantum wire lasers. Arakawa, Yasuhiko; Vahala, Kerry; Yariv, Amnon // Applied Physics Letters;1984, Vol. 45 Issue 9, p950 

    We calculate the relaxation oscillation corner frequency fr and the linewidth enhancement factor α for both a quantum well and a quantum wire semiconductor laser. A comparison of the results to those of a conventional double heterostructure device indicates that fr can be enhanced by 2×...

  • Optimization and Characterization of InGaAsN/GaAs Quantum-well Ridge Laser Diodes for High Frequency Operation. Bonnefont, S.; Messant, B.; Boutillier, M.; Gauthier-Lafaye, O.; Lozes-Dupuy, F.; Martinez, A.; Sallet, V.; Merghem, K.; Ferlazzo, L.; Harmand, J.; Ramdane, A.; Provost, J.; Dagens, B.; Landreau, J.; Gouezigou, O.Le; Marie, X. // Optical & Quantum Electronics;Mar2006, Vol. 38 Issue 4-6, p313 

    Optimization and characterization of multiple InGaAsN/GaAs quantum-well laser diodes for high frequency operation are reported. From the modelling of the dilute nitride quantum well, we investigate how to design the structure to achieve a high frequency operation. The gain characteristics are...

  • Role of the thermal boundary resistance of the quantum well interfaces on the degradation of high power laser diodes. Martín-Martín, A.; Iñiguez, P.; Jiménez, J.; Oudart, M.; Nagle, J. // Journal of Applied Physics;Aug2011, Vol. 110 Issue 3, p033113 

    The influence of the quantum well (QW) interfaces with the barrier layers on the rapid degradation of AlGaAs based high power laser bars (808 nm) is investigated. Thermal stresses induced in the device by the local heating produced by nonradiative recombination areas at the facet mirror are...

  • Circularly polarized lasing in a (110)-oriented quantum well vertical-cavity surface-emitting laser under optical spin injection. Fujino, Hiroshi; Koh, Shinji; Iba, Satoshi; Fujimoto, Toshiyasu; Kawaguchi, Hitoshi // Applied Physics Letters;3/30/2009, Vol. 94 Issue 13, p131108 

    We fabricated and characterized a vertical-cavity surface-emitting laser (VCSEL) based on (110) InGaAs/GaAs multiple quantum wells (MQWs). Circularly polarized lasing in the (110) VCSEL by optical injection of spin-polarized electrons has been demonstrated at 77 K and room temperature. A high...

  • Information capability of the thermal radiation noise (Analytical overview). Salkov, E. A.; Svechnikov, G. S. // Semiconductor Physics, Quantum Electronics & Optoelectronics;2008, Vol. 11 Issue 1, p79 

    The main purpose of this overview is to make an effort at joining the widely spread practical tendency of "damping the noise" with the non-apparent but presumably perspective thesis "using the noise" through the realization of "information properties of noise". The paper deals with physical...

  • Effects of strain in multiple quantum well distributed feedback lasers. Tanbun-Ek, T.; Logan, R. A.; Chu, S. N. G.; Sergent, A. M.; Wecht, K. W. // Applied Physics Letters;11/19/1990, Vol. 57 Issue 21, p2184 

    A survey of graded-index separate confinement multiple quantum well distributed feedback lasers comparing the effects of strain in the quantum well upon threshold, output power, and linewidth is reported. Lasers with either compressive or tensile strained quantum wells and a long cavity length...

  • Continuous-wave operation of ultraviolet InGaN/InAlGaN multiple-quantum-well laser diodes. Kneissl, Michael; Treat, David W.; Teepe, Mark; Miyashita, Naoko; Johnson, Noble M. // Applied Physics Letters;4/14/2003, Vol. 82 Issue 15, p2386 

    We demonstrate ultraviolet InGaN/InAlGaN multiple-quantum-well laser diodes operating under continuous-wave (cw) conditions. The laser diodes were grown on sapphire substrates by metalorganic chemical vapor deposition. Under pulsed bias conditions, we have achieved threshold current densities as...

  • Long-wavelength strain-compensated GaAsSb quantum-well heterostructures laser grown by metalorganic chemical vapor deposition. Noh, M.S.; Dupuis, R.D.; Bour, D.P.; Walter, G.; Holonyak, N. // Applied Physics Letters;9/29/2003, Vol. 83 Issue 13, p2530 

    We report data on strain-compensated GaAsSb double-quantum-well lasers having a type-I band alignment and grown by metalorganic chemical vapor deposition on GaAs substrates. In order to compensate for strain effects and to establish a type-I band alignment, tensile-strained higher-band-gap GaAsP...

  • Many-body optical gain of (101¯0) wurtzite GaN/AlGaN quantum-well lasers. Park, Seoung-Hwan; Seoung-Hwan Park // Applied Physics Letters;12/18/2000, Vol. 77 Issue 25 

    Optical properties of (101¯0)-oriented wurtzite (WZ) GaN/AlGaN quantum well (QW) lasers are investigated by the non-Markovian gain model with many-body effects. These results are compared with those of (0001)-oriented WZ GaN/AlGaN QW with spontaneous and piezoelectric polarization taken into...

  • In-plane anisotropic lasing characteristics of (110)-oriented GaInAsP quantum-well lasers. Oe, Kunishige; Bhat, Raj; Ueki, Mineo // Applied Physics Letters;12/18/2000, Vol. 77 Issue 25 

    (110)-oriented GaInAsP quantum-well (QW) lasers have been fabricated to investigate growth direction effects of the QW structure on laser performance. Large in-plane anisotropic threshold current densities in the lasers were observed between the [001] and [11¯0] cavity directions of the...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics