Experimental study of forward current transients in amorphous silicon p-i-n structures

Yan, B.; Eliat, A.
October 1994
Applied Physics Letters;10/31/1994, Vol. 65 Issue 18, p2338
Academic Journal
Examines forward current transients in amorphous silicon p-i-n devices. Significance of bias voltage, temperature and illumination intensity in delay time of current transition; Influence of initial current decay in delayed current onset; Implication of hole current density-electron current for power-law between delay time and initial electron current.


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