TITLE

Low temperature limits to molecular beam epitaxy of GaAs

AUTHOR(S)
Mirin, Richard P.; Ibbetson, James P.
PUB. DATE
October 1994
SOURCE
Applied Physics Letters;10/31/1994, Vol. 65 Issue 18, p2335
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the reflection high-energy electron diffraction oscillations during molecular beam epitaxy of gallium arsenide alloy crystals. Application of the Monte Carlo simulations in step density oscillations depiction; Details on the As:Ga as a critical parameter; Implications of results for low temperature epitaxy research of III-V semiconductors.
ACCESSION #
4207751

 

Related Articles

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics