TITLE

Low-temperature epitaxial growth and photoluminescence characterization of GaN

AUTHOR(S)
Dissanayake, A.; Yu, Z.J.
PUB. DATE
October 1994
SOURCE
Applied Physics Letters;10/31/1994, Vol. 65 Issue 18, p2317
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines low-temperature epitaxial growth and photoluminescence of group-III nitride. Applicability in optical devices/blue-green light emitting diodes, ultraviolet laser diodes/ultraviolet detectors and electronic devices; Use of chemical-vapor deposition (CVD), metalorganic CVD and molecular-beam epitaxy in epitaxial thin film preparation.
ACCESSION #
4207745

 

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