Low-temperature epitaxial growth and photoluminescence characterization of GaN

Dissanayake, A.; Yu, Z.J.
October 1994
Applied Physics Letters;10/31/1994, Vol. 65 Issue 18, p2317
Academic Journal
Examines low-temperature epitaxial growth and photoluminescence of group-III nitride. Applicability in optical devices/blue-green light emitting diodes, ultraviolet laser diodes/ultraviolet detectors and electronic devices; Use of chemical-vapor deposition (CVD), metalorganic CVD and molecular-beam epitaxy in epitaxial thin film preparation.


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