TITLE

Implantation and transient B diffusion in Si: The source of the interstitials

AUTHOR(S)
Eaglesham, D.J.; Stolk, P.A.
PUB. DATE
October 1994
SOURCE
Applied Physics Letters;10/31/1994, Vol. 65 Issue 18, p2305
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the transient enhanced diffusion (TED) during initial annealing of ion implanted dopants in semiconductors. Use of quantitative transmission electron microscopy to focus interstitial emissions from specific defects as factors in TED; Details of rod-like defects; Contribution of defects to interstitial flux and transient observation.
ACCESSION #
4207741

 

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