TITLE

Crystalline structure of AlGaN epitaxy on sapphire using AlN buffer layers

AUTHOR(S)
Ponce, F.A.; Major Jr., J.S.
PUB. DATE
October 1994
SOURCE
Applied Physics Letters;10/31/1994, Vol. 65 Issue 18, p2302
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the crystalline structure near the substrate interface for aluminum films grown on sapphire substrates. Application of metalorganic chemical vapor deposition technique in thin film productions; Role of transmission electron lattice images in depicting interface coherence; Identification of dislocation defect structure of the substrate interface epilayer.
ACCESSION #
4207740

 

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