Crystalline structure of AlGaN epitaxy on sapphire using AlN buffer layers

Ponce, F.A.; Major Jr., J.S.
October 1994
Applied Physics Letters;10/31/1994, Vol. 65 Issue 18, p2302
Academic Journal
Examines the crystalline structure near the substrate interface for aluminum films grown on sapphire substrates. Application of metalorganic chemical vapor deposition technique in thin film productions; Role of transmission electron lattice images in depicting interface coherence; Identification of dislocation defect structure of the substrate interface epilayer.


Related Articles

  • Liquid source metalorganic chemical vapor deposition of aluminum from triethylamine alane. Gross, M. E.; Fleming, C. G.; Cheung, K. P.; Heimbrook, L. A. // Journal of Applied Physics;2/15/1991, Vol. 69 Issue 4, p2589 

    Reports on a low-pressure metalorganic chemical vapor deposition of aluminum using triethylamine alane. Function of the liquid source; Activators for nucleation of aluminum; Electrical resistivities of the aluminum films on titanium-nitrogen.

  • High-quality single GaAs quantum wells grown by metalorganic chemical vapor deposition. Miller, R. C.; Dupuis, R. D.; Petroff, P. M. // Applied Physics Letters;1984, Vol. 44 Issue 5, p508 

    GaAs-AlxGa1-xAs single and multiquantum well structures grown by metalorganic chemical vapor deposition have been examined for the first time in detail using low-temperature photoluminescence, cathodoluminescence, and transmission electron microscopy. The better heterointerfaces are very uniform...

  • Achievement of alternative amorphous AlAs/crystalline AlGaAs multilayers. Hao Wang; Changjun Liao; Shuwen Zheng; Songhao Liu // Applied Physics Letters;6/5/2006, Vol. 88 Issue 23, p231908 

    A hybrid multilayer, composed of ten period amorphous AlAs/crystalline GaAlAs stacks, is realized by metalorganic chemical vapor deposition method on a GaAs substrate. Cross-sectional transmission electron microscopy shows the presence of sharp amorphous/crystalline interfaces. The electron...

  • Highly textured Pb(Zr0.3Ti0.7)O3 thin films on GaN/sapphire by metalorganic chemical vapor deposition. Dey, S. K.; Cao, W.; Bhaskar, S.; Li, J. // Journal of Materials Research;Jun2006, Vol. 21 Issue 6, p23 

    Highly (111) textured PbZr0.3Ti0.7)O3 (PZT 30/70) films were deposited on (0001) GaN/sapphire substrates using liquid-source metalorganic chemical vapor deposition (MOCVD) technique at 520 °C and 80 nm/min. The crystallinity of as-deposited PZT films and the structure of PZT/GaN interface...

  • Structural and optical characterization of type-II InAs/InAs1-xSbx superlattices grown by metalorganic chemical vapor deposition. Steenbergen, E. H.; Huang, Y.; Ryou, J.-H.; Ouyang, L.; Li, J.-J.; Smith, D. J.; Dupuis, R. D.; Zhang, Y.-H. // Applied Physics Letters;8/15/2011, Vol. 99 Issue 7, p071111 

    Strain-balanced type-II InAs/InAs1-xSbx superlattices with various compositions (x = 0.22, 0.23, 0.37) and different layer thicknesses (tInAs = 7 nm, tInAsSb = 3.3, 2.3, 2.0 nm, respectively) have been grown by metalorganic chemical vapor deposition on GaSb substrates. X-ray diffraction revealed...

  • Influence of vicinal sapphire substrate on the properties of N-polar GaN films grown by metal-organic chemical vapor deposition. Zhiyu Lin; Jincheng Zhang; Shengrui Xu; Zhibin Chen; Shuangyong Yang; Kun Tian; Xujun Su; Xuefang Shi; Yue Hao // Applied Physics Letters;8/25/2014, Vol. 105 Issue 8, p1 

    The influence of vicinal sapphire substrates on the growth of N-polar GaN films by metal-organic chemical vapor deposition is investigated. Smooth GaN films without hexagonal surface feature are obtained on vicinal substrate. Transmission electron microscope results reveal that basal-plane...

  • Effect of critical thickness on structural and optical properties of InxGa1-xN/GaN multiple quantum wells. Lü, W.; Li, D. B.; Li, C. R.; Shen, F.; Zhang, Z. // Journal of Applied Physics;4/15/2004, Vol. 95 Issue 8, p4362 

    InGaN/GaN multiquantum-well (MQW) structures grown by metalorganic chemical-vapor deposition on n-type GaN and capped by p-type GaN were investigated by cross-sectional transmission electron microscopy, double crystal x-ray diffraction, and temperature-dependent photoluminescence. For the sample...

  • Dislocation confinement in the growth of Na flux GaN on metalorganic chemical vapor deposition-GaN. Takeuchi, S.; Asazu, H.; Imanishi, M.; Nakamura, Y.; Imade, M.; Mori, Y.; Sakai, A. // Journal of Applied Physics;2015, Vol. 118 Issue 24, p245306-1 

    We have demonstrated a GaN growth technique in the Na flux method to confine c-, (a+c)-, and a-type dislocations around the interface between a Na flux GaN crystal and a GaN layer grown by metalorganic chemical vapor deposition (MOCVD) on a (0001) sapphire substrate. Transmission electron...

  • The origin and evolution of V-defects in InxAl1-xN epilayers grown by metalorganic chemical vapor deposition. Miao, Z. L.; Yu, T. J.; Xu, F. J.; Song, J.; Huang, C. C.; Wang, X. Q.; Yang, Z. J.; Zhang, G. Y.; Zhang, X. P.; Yu, D. P.; Shen, B. // Applied Physics Letters;12/7/2009, Vol. 95 Issue 23, p231909 

    Near-lattice-matched and highly compressive-strained InxAl1-xN epilayers were grown on GaN templates by metalorganic chemical vapor deposition. The V-defects associated with screw-component threading dislocations (TDs) were found in all the InxAl1-xN layers. Their origin and evolution were...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics