Theoretical investigation of minority carrier leakages of high-power 0.8 microm

Diaz, J.; Eliashevich, I.
October 1994
Applied Physics Letters;10/31/1994, Vol. 65 Issue 18, p2260
Academic Journal
Examines the performance of heterostructure layers grown by chemical vapor deposition in laser diodes for optical fiber communications. Effect of low band-gap difference on current leakage; Use of laser diodes of specific cavity length in eliminating current leakage; Suitability of long-cavity diodes fabricated in aluminum-free system in high power operations.


Related Articles

  • Room-temperature laser operation of AlGaAs/GaAs double heterostructures fabricated on Si substrates by metalorganic chemical vapor deposition. Sakai, Shiro; Soga, Tetsuo; Takeyasu, Masanari; Umeno, Masayoshi // Applied Physics Letters;2/10/1986, Vol. 48 Issue 6, p413 

    AlGaAs/GaAs double heterostructure laser diodes have been fabricated on Si substrates using GaP/(GaP/GaAsP) superlattice/(GaAsP/GaAs) superlattice intermediate layers grown by metalorganic chemical vapor deposition. A threshold current density at 16.5 °C and a characteristic temperature T0 of...

  • MOCVD-Grown Broad Area InGaAs/GaAs/InGaP Laser Diodes. Vinokurov, D. A.; Kapitonov, V. A.; Nikolaev, D. N.; Stankevich, A. L.; Lyutetskii, A. V.; Pikhtin, N. A.; Slipchenko, S. O.; Sokolova, Z. N.; Fetisova, N. V.; Arsent�ev, I. N.; Tarasov, I. S. // Semiconductors;Nov2001, Vol. 35 Issue 11, p1324 

    A MOCVD technology for growth of InGaAs/GaAs/InGaP laser heterostructures on a modified Epiquip VP-50-RP installation was developed. Mesa stripe laser diodes with threshold current density J[sub th] = 100-200 A/cm�, internal optical loss a[sub i] = 1.3-1.7 cm[sup -1], and internal quantum...

  • MOCVD-Grown InGaAs/GaAs/AlGaAs Laser Structures with a Broad-Area Contact. Bulaev, P. V.; Kapitonov, V. A.; Lutetskii, A. V.; Marmalyuk, A. A.; Nikitin, D. B.; Nikolaev, D. N.; Padalitsa, A. A.; Pikhtin, N. A.; Bondarev, A. D.; Zalevskii, I. D.; Tarasov, I. S. // Semiconductors;Sep2002, Vol. 36 Issue 9, p1065 

    A metal-organic chemical vapor deposition (MOCVD) technique is developed for a diode laser heterostructure in a system of InGaAs/GaAs/AlGaAs solid solutions; the optimal sizes and the doping profile of the structure are determined to minimize the internal optical losses. Mesa-strip diode lasers...

  • Origin of forward leakage current in GaN-based light-emitting devices. Lee, S. W.; Oh, D. C.; Goto, H.; Ha, J. S.; Lee, H. J.; Hanada, T.; Cho, M. W.; Yao, T.; Hong, S. K.; Lee, H. Y.; Cho, S. R.; Choi, J. W.; Choi, J. H.; Jang, J. H.; Shin, J. E.; Lee, J. S. // Applied Physics Letters;9/25/2006, Vol. 89 Issue 13, p132117 

    The authors fabricated GaN-based light-emitting diodes (LEDs) on two different GaN templates with the same LED structure. One on thin GaN template (∼2 μm) with high dislocation density [low (109 cm-2)] grown by metal-organic vapor-phase epitaxy (sample A) and the other on thick GaN...

  • Role of surface trap states on two-dimensional electron gas density in InAlN/AlN/GaN heterostructures. Pandey, S.; Cavalcoli, D.; Fraboni, B.; Cavallini, A.; Brazzini, T.; Calle, F. // Applied Physics Letters;4/9/2012, Vol. 100 Issue 15, p152116 

    In order to clarify the effect of charged dislocations and surface donor states on the transport mechanisms in polar AlInN/AlN/GaN heterostructures, we have studied the current-voltage characteristics of Schottky junctions fabricated on AlInN/AlN/GaN heterostructures. The reverse-bias leakage...

  • Yellow-emitting AlGaInP double heterostructure laser diode at 77 K grown by atmospheric metalorganic chemical vapor deposition. Ikeda, M.; Honda, M.; Mori, Y.; Kaneko, K.; Watanabe, N. // Applied Physics Letters;1984, Vol. 45 Issue 9, p964 

    Yellow-emitting pulsed laser operation of an Al0.37Ga0.15In0.48P/Al0.16Ga0.36In0.48P/ Al0.37Ga0.15In0.48P double heterostructure laser diode was obtained at 77 K. The emission wavelength was 579 nm. The threshold current density was 5.6 kA/cm2 for a diode with a Si3N4 insulated 8-μm-wide and...

  • Characteristics of InGaN/AlGaN light-emitting diodes on sapphire substrates. Egawa, T.; Jimbo, T.; Umeno, M. // Journal of Applied Physics;12/1/1997, Vol. 82 Issue 11, p5816 

    Discusses the characteristics and degradation of an InGaN/AlGaN double-heterostructure light-emitting diode. Metalorganic chemical vapor deposition on a sapphire substrate; Electrical and optical degradations under high injected current density and high ambient temperature; Observations of...

  • p-doping-free InGaN/GaN light-emitting diode driven by three-dimensional hole gas. Zhang, Zi-Hui; Tiam Tan, Swee; Kyaw, Zabu; Liu, Wei; Ji, Yun; Ju, Zhengang; Zhang, Xueliang; Wei Sun, Xiao; Volkan Demir, Hilmi // Applied Physics Letters;Dec2013, Vol. 103 Issue 26, p263501 

    Here, GaN/AlxGa1-xN heterostructures with a graded AlN composition, completely lacking external p-doping, are designed and grown using metal-organic-chemical-vapour deposition (MOCVD) system to realize three-dimensional hole gas (3DHG). The existence of the 3DHG is confirmed by...

  • MOCVD GaInAsP/GaInP/AlGaInP Laser Structures Emitting at 780 nm. Vinokurov, D. A.; Zorina, S. A.; Kapitonov, V. A.; Leshko, A. Yu.; Lyutetski&ibreve;, A. V.; Nikolaev, D. N.; Pikhtin, N. A.; Stankevich, A. L.; Fetisova, N. V.; Shamakhov, V. V.; Tarasov, I. S. // Semiconductors;Dec2003, Vol. 37 Issue 12, p1421 

    Metal-organic chemical vapor deposition (MOCVD) was used to form laser heterostructures in the system of GaInAsP/GaInP/AlGaInP solid solutions. The design of the laser structure was chosen on the basis of the calculated band offsets at the heteroboundaries in the active region of the waveguide....


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics