TITLE

Theoretical investigation of minority carrier leakages of high-power 0.8 microm

AUTHOR(S)
Diaz, J.; Eliashevich, I.
PUB. DATE
October 1994
SOURCE
Applied Physics Letters;10/31/1994, Vol. 65 Issue 18, p2260
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the performance of heterostructure layers grown by chemical vapor deposition in laser diodes for optical fiber communications. Effect of low band-gap difference on current leakage; Use of laser diodes of specific cavity length in eliminating current leakage; Suitability of long-cavity diodes fabricated in aluminum-free system in high power operations.
ACCESSION #
4207726

 

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