TITLE

3.9-microm InAsSb/AlAsSb double-heterostructure diode lasers with high output power and improved

AUTHOR(S)
Choi, H.K.; Turner, G.W.
PUB. DATE
October 1994
SOURCE
Applied Physics Letters;10/31/1994, Vol. 65 Issue 18, p2251
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the pulsed operation of high-performance semiconductor diode lasers emitting in the midinfrared band. Applicability of the semiconductor performance to laser radar, remote sensing and molecular spectroscopy; Role of molecular-beam epitaxy in evaluating laser structure layers; Presentation of characteristic temperature.
ACCESSION #
4207723

 

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