TITLE

Direct observation of potential distribution across Si/Si p-n junctions using off-axis electron

AUTHOR(S)
McCartney, M.R.; Smith, David J.
PUB. DATE
November 1994
SOURCE
Applied Physics Letters;11/14/1994, Vol. 65 Issue 20, p2603
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Describes the use of off-axis electron holography for direct observation of voltage distribution across silicon/silicon semiconductor junction. Creation of a method for thickness determination; Extraction of two-dimensional maps of depletion region potential; Limitation in precision by signal-to-noise consideration.
ACCESSION #
4207717

 

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