Transient component of leakage current in silicon pn junctions

Murakami, Yoshio; Shingyouji, Takayuki
November 1994
Applied Physics Letters;11/14/1994, Vol. 65 Issue 20, p2591
Academic Journal
Describes the existence of transient components in pn junction leakage current formed in Czochralski silicon wafers. Measurement of area and time dependence of leakage current; Absence of transient components in epitaxial and float-zone Czochralski wafers with low oxygen content; Cause for oxygen-related hole traps with exponential energy distribution.


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