TITLE

Transient component of leakage current in silicon pn junctions

AUTHOR(S)
Murakami, Yoshio; Shingyouji, Takayuki
PUB. DATE
November 1994
SOURCE
Applied Physics Letters;11/14/1994, Vol. 65 Issue 20, p2591
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Describes the existence of transient components in pn junction leakage current formed in Czochralski silicon wafers. Measurement of area and time dependence of leakage current; Absence of transient components in epitaxial and float-zone Czochralski wafers with low oxygen content; Cause for oxygen-related hole traps with exponential energy distribution.
ACCESSION #
4207713

 

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