TITLE

Improvement of grain size and deposition rate of microcrystalline silicon by use of very high

AUTHOR(S)
Finger, F.; Hapke, P.
PUB. DATE
November 1994
SOURCE
Applied Physics Letters;11/14/1994, Vol. 65 Issue 20, p2588
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Describes the improvements of grain size, deposition rate and Hall mobility of microcrystalline silicon (Si). Use of very high frequency glow discharge to provide favorable growth condition; Preparation of Si crystal by plasma enhanced chemical vapor deposition; Effect of plasma excitation frequency on Si growth condition and material properties.
ACCESSION #
4207712

 

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