Digital etching of GaAs using Se molecular beam and atomic hydrogen beam

Takatani, Shinichiro; Kikawa, Takeshi
November 1994
Applied Physics Letters;11/14/1994, Vol. 65 Issue 20, p2585
Academic Journal
Develops a digital etching technique for gallium arsenide using selenium (Se) molecular beam and atomic hydrogen beam. Induction of selenium and arsenic exchange reaction through Se molecular beam irradiation; Selective removal of gallium[sub 2]selenium[sub 3] by atomic hydrogen beam; Involvement of a self-limiting mechanism in the etching process.


Related Articles

  • Reaction probability and reaction mechanism in silicon etching with a hot Cl2 molecular beam. Suzuki, Keizo; Hiraoka, Susumu // Journal of Applied Physics;6/15/1995, Vol. 77 Issue 12, p6624 

    Presents a study which examined the reaction probability and reaction mechanism in silicon semiconductor etching with hot chloride molecular beam. Experimental apparatus and procedure; Experimental results; Discussion.

  • Etching effect on metal-organic molecular-beam epitaxy growth of GaSb using triethylgallium and.... Liu, X.F.; Asahi, H. // Applied Physics Letters;8/22/1994, Vol. 65 Issue 8, p1027 

    Investigates etching effect on metal-organic molecular beam epitaxy growth of GaSb using tridimethylaminoantimony (TDMASb) and triethylgallium. Observation of an etching effect when TDMASb in supplied to the (001) GaSb surface; Dependence of the etching rate on the substrate temperature and...

  • Silicon etching with oxygen molecular beam assisted by predeposited germanium. Tatsumi, Toru; Niino, Taeko; Hirayama, Hiroyuki // Applied Physics Letters;2/12/1990, Vol. 56 Issue 7, p635 

    Si was etched using an O2 molecular beam according to the chemical reaction 2Si+O2→2SiO↑. The minimum etching temperature was decreased by 25 °C when a Ge layer had been deposited on a clean Si surface before etching. At 800 °C, the Ge-coated Si surface was etched while the...

  • Improvement in low energy ion-induced damage with a low temperature GaAs capping layer. Chen, Ching-Hui; Hu, Evelyn L.; Mishra, Umesh K.; Ibbetson, James P.; Wu, Xuehua; Speck, Jim S. // Applied Physics Letters;9/16/1996, Vol. 69 Issue 12, p1728 

    A thin capping layer of annealed GaAs (∼210 A˚) grown at low temperature (LT-GaAs) can effectively block incident ions from penetrating into the growth substrate. Ion-bombarded, multiple quantum well structures capped by an annealed LT-GaAs layer show a dramatic improvement in the...

  • Reactive ion etching of ZnSe by gas mixture of ethane and hydrogen. Ohtsuka, K.; Imaizumi, M. // Applied Physics Letters;6/15/1992, Vol. 60 Issue 24, p3025 

    Focuses on reactive ion etching of zinc selenide (ZnSe) by gas mixture of ethane and hydrogen. Growth of ZnSe epitaxial layers by gas source molecular beam epitaxy; Analysis of the ethane concentration dependence of surface morphologies; Use of scanning electron microscopy.

  • Monolayer chemical beam etching: Reverse molecular beam epitaxy. Tsang, W.T.; Chiu, T.H. // Applied Physics Letters;12/20/1993, Vol. 63 Issue 25, p3500 

    Develops a monolayer chemical beam etching process. Capability and versatility of a chemical beam epitaxial system; Reversal of the molecular beam epitaxy process; Addition of in situ reflection high-energy electron diffraction to achieve etching capability.

  • Laser bilayer etching of GaAs surfaces. Maki, P. A.; Ehrlich, D. J. // Applied Physics Letters;7/10/1989, Vol. 55 Issue 2, p91 

    An excimer-laser-stimulated etching technique is described for controlled pulse-by-pulse stripping of molecular bilayers from GaAs surfaces. The process is carried out in a molecular beam epitaxy (MBE) system equipped with an auxiliary low-pressure Cl2 chamber. 193 nm ArF laser light is used to...

  • Nanoheteroepitaxy of GaN on a nanopore array Si surface. Liang, J.; Hong, S.-K.; Kouklin, N.; Beresford, R.; Xu, J. M. // Applied Physics Letters;9/1/2003, Vol. 83 Issue 9, p1752 

    We report the growth by molecular beam epitaxy and the optical characterization of GaN films nucleated on a Si(111) surface that has been patterned by dry etching an ordered array of nanometer-scale pores prior to the growth. The etching is performed using an anodized aluminum oxide membrane as...

  • Optical Properties of GaAs Quantum Dots Fabricated by Filling of Self-Assembled Nanoholes. Heyn, Ch.; Stemmann, A.; Köppen, T.; Strelow, Ch.; Kipp, T.; Grave, M.; Mendach, S.; Hansen, W. // Nanoscale Research Letters;Mar2010, Vol. 5 Issue 3, p576 

    Experimental results of the local droplet etching technique for the self-assembled formation of nanoholes and quantum rings on semiconductor surfaces are discussed. Dependent on the sample design and the process parameters, filling of nanoholes in AlGaAs generates strain-free GaAs quantum dots...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics