TITLE

Local Ga implantation with focused ion beam and ambipolar lateral carrier transport in strained

AUTHOR(S)
Okubo, A.; Fukatsu, S.
PUB. DATE
November 1994
SOURCE
Applied Physics Letters;11/14/1994, Vol. 65 Issue 20, p2582
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Describes lateral carrier diffusion in strained silicon[sub 1-x]germanium [sub x]/silicon quantum well using two-dimensional grating geometry. Definition of the grating geometry by local gallium implantation with focused ion beam; Occurrence of dominance switch of steady-state photoluminescence intensity; Effects of temperature on lateral diffusion length.
ACCESSION #
4207710

 

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