Characterization of metal-oxide-semiconductor capacitors, fabricated on (111) beta-SiC

Chen, H-S.; Parsons, J.D.
November 1994
Applied Physics Letters;11/14/1994, Vol. 65 Issue 20, p2576
Academic Journal
Characterizes metal-oxide-semiconductor (MOS) capacitors fabricated on (111) beta-silicon carbide (SiC) epilayers. Growth of beta-SiC on (111) titanium carbide by disylethane pyrolysis; Electrical properties of MOS capacitor; Feasibility of inversion mode MOS field effect transistors in beta-SiC; Estimation of interface trap density using Terman method.


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