TITLE

Determination of heterojunction band discontinuities in strained Al[sub x]In[sub 1 - x]P/InP

AUTHOR(S)
Lammasniemi, J.; Tappura, K.
PUB. DATE
November 1994
SOURCE
Applied Physics Letters;11/14/1994, Vol. 65 Issue 20, p2574
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Determines the conduction and valence band discontinuities in strained aluminum[sub x]indium[sub 1-x]phosphorous/indium phosphide heterojunction system. Use of absorption measurements in multiquantum well and superlattice structure; Suitability of strained system for the barrier layer material; Formation of staggered type II heterojunction with indium phosphide.
ACCESSION #
4207707

 

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