TITLE

Chemical vapor deposition of heteroepitaxial Si[sub 1-x-y]Ge[sub x]C[sub y] films on (100)Si

AUTHOR(S)
Atzmon, Z.; Bair, A.E.
PUB. DATE
November 1994
SOURCE
Applied Physics Letters;11/14/1994, Vol. 65 Issue 20, p2559
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Describes the growth of heteroepitaxial silicon[sub 1-x-y]germanium[sub x]carbon[sub y] thin film on (100) silicon substrates by chemical vapor deposition. Structural characterization using Rutherford backscattering spectrometry; Sensitivity of crystallinity to carbon[sub 2]hydrogen[sub 4] flow rate; Deposition condition for crystalline phase transformation.
ACCESSION #
4207702

 

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