Silicon wafer bonding studied by infrared absorption spectroscopy

Feijoo, Diego; Chabal, Y.J.
November 1994
Applied Physics Letters;11/14/1994, Vol. 65 Issue 20, p2548
Academic Journal
Examines the mechanism of silicon direct wafer bonding using multiple internal transmission infrared absorption spectroscopy. Interaction between hydrophilic and hydrophobix silicon wafers interfaces; Presence of water and hydrogen molecules in hydrophilic wafers; Temperature dependence of silicon-hydrogen stretch spectra in hydrophobic wafers.


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