TITLE

Silicon wafer bonding studied by infrared absorption spectroscopy

AUTHOR(S)
Feijoo, Diego; Chabal, Y.J.
PUB. DATE
November 1994
SOURCE
Applied Physics Letters;11/14/1994, Vol. 65 Issue 20, p2548
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the mechanism of silicon direct wafer bonding using multiple internal transmission infrared absorption spectroscopy. Interaction between hydrophilic and hydrophobix silicon wafers interfaces; Presence of water and hydrogen molecules in hydrophilic wafers; Temperature dependence of silicon-hydrogen stretch spectra in hydrophobic wafers.
ACCESSION #
4207698

 

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