TITLE

Strain compensated InAsP/InP/InGaP multiple quantum well for 1.5 mum wavelength

AUTHOR(S)
Jiang, X.S.; Yu, P.K.L.
PUB. DATE
November 1994
SOURCE
Applied Physics Letters;11/14/1994, Vol. 65 Issue 20, p2536
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Describes the growth of strain compensated indium arsenide phosphide/indium phosphide/indium gallium phosphide multiple quantum well (MQW) at 1.5 mum wavelength. Deposition by metalorganic vapor phase epitaxy; Use of a composite barrier structure to tune MQW net strain; Display of crystalline and optical quality improvement.
ACCESSION #
4207694

 

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