TITLE

Amplitude squeezing of a multiple quantum-well distributed-feedback semiconductor laser

AUTHOR(S)
Kikuchi, Kazuro; Watanabe, Kazuma
PUB. DATE
November 1994
SOURCE
Applied Physics Letters;11/14/1994, Vol. 65 Issue 20, p2533
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Demonstrates amplitude squeezing of a multiple quantum-well distributed-feedback semiconductor laser operating at room temperature. Reduction of spontaneous-emission noise using Michelson interferometer; Determination of noise spectral density from laser differential quantum efficiency; Cancellation of spontaneous noise by the frequency noise.
ACCESSION #
4207693

 

Related Articles

  • Dependence of emission wavelength on cavity length and facet reflectivities in multiple quantum well semiconductor lasers. Wilcox, J. Z.; Ou, S.; Yang, J. J.; Jansen, M.; Peterson, G. L. // Applied Physics Letters;5/29/1989, Vol. 54 Issue 22, p2174 

    The spectral emission characteristics of multiple quantum well semiconductor lasers of the Fabry–Perot type are a strong function of laser cavity length and mirror reflectivities. 15 nm theoretically predicted wavelength shifts were validated experimentally. This has immediate...

  • Optically pumped mode-locked multiple quantum well laser. Valk, B.; Salour, M. M.; Munns, G.; Morkoç, H. // Applied Physics Letters;9/8/1986, Vol. 49 Issue 10, p549 

    We report the first optically pumped mode-locked Al0.3Ga0.7As/GaAs multiple quantum well (MQW) laser in external cavity. The MQW structure with a total thickness of 5 μm was grown by molecular beam epitaxy on a Si-doped GaAs substrate and was synchronously pumped by a mode-locked Kr+ laser...

  • Ultimate limit in low threshold quantum well GaAlAs semiconductor lasers. Lau, K. Y.; Derry, P. L.; Yariv, A. // Applied Physics Letters;1/11/1988, Vol. 52 Issue 2, p88 

    Gain measurements were performed on buried heterostructure single quantum well lasers to ascertain the transparency current density, which represents a basic limit in the threshold current. By using the optimal design approach, a lowest threshold of 0.55 mA in a 120-μm-long device was...

  • Full-aperture, high-power semiconductor laser. Waters, R. G.; Dalby, R. J.; Emanuel, M. A. // Applied Physics Letters;6/19/1989, Vol. 54 Issue 25, p2534 

    A single quantum well laser with a 2-mm-wide aperture has exhibited low threshold current density and nearly 100% packing fraction. The lateral structure relies on epitaxial growth on a corrugated substrate to frustrate radiative lateral processes and it thus eliminates the need for isolation at...

  • Anomalous Dispersion, Differential Gain, and Dispersion of the a-Factor in InGaAs/AlGaAs/GaAs Strained Quantum-Well Semiconductor Lasers. Bogatov, A. P.; Boltaseva, A. E.; Drakin, A. E.; Belkin, M. A.; Konyaev, V. P. // Semiconductors;Oct2000, Vol. 34 Issue 10, p1207 

    A new procedure for the experimental determination of the differential gain and dispersion of the amplitude-phase coupling coefficient in semiconductor injection lasers was proposed and implemented. The a-factor and differential gain for InGaAs/AlGaAs/GaAs single quantum well (QW) semiconductor...

  • External-cavity InGaAs/InP graded index multiquantum well laser with a 200 nm tuning range. Lidgard, A.; Tanbun-Ek, T.; Logan, R. A.; Temkin, H.; Wecht, K. W.; Olsson, N. A. // Applied Physics Letters;2/26/1990, Vol. 56 Issue 9, p816 

    A tuning range of 200 nm has been achieved with a step-graded multiquantum well InGaAs/InP laser in an external-cavity configuration. Continuous, single-mode lasing could be observed from 1440 to 1640 nm. Depending on the current density, the laser can operate both at the n=1 and n=2 quantized...

  • Low threshold pulsed and continuous-wave laser action in optically pumped (Zn,Cd)Se/ZnSe.... Jeon, H.; Ding, J.; Nurmikko, A.V.; Luo, H.; Samarth, N.; Furdyna, J. // Applied Physics Letters;9/9/1991, Vol. 59 Issue 11, p1293 

    Examines the obtainment of laser action in the blue-green at room temperature in pulsed optically pumped (Zn,Cd)Se/ZnSe multiple quantum well structures. Continuous-wave operation in a II-VI semiconductor laser; Role of excitons in defining the lasing mechanism.

  • Uniform p-type impurity-doped multiquantum well AlGaInP semiconductor lasers with a lasing.... Tanaka, T.; Yanagisawa, H.; Kakibayashi, H.; Minagawa, S.; Kajimura, T. // Applied Physics Letters;10/14/1991, Vol. 59 Issue 16, p1943 

    Examines uniform p-type impurity-doped multiquantum well AlGaInP semiconductor lasers. Application of impurity doping into the multiquantum well (MQW) active layer; Calculation of quantized energy level in GaInP quantum wells; Comparison of uniform impurity with modulation doping.

  • High-power operation of strained InGaAs/AlGaAs single quantum well lasers. Moser, A.; Oosenbrug, A.; Latta, E.E.; Forster, Th.; Gasser, M. // Applied Physics Letters;11/18/1991, Vol. 59 Issue 21, p2642 

    Investigates the high-power operation of strained indium gallium arsenide/aluminum gallium arsenide single quantum well (QW) lasers. Limitation of the QW laser lifetime by the air-cleaved facets; Feasibility of the single mode operation; Lattice hardening in the facet region.

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics