Interface roughness scattering in thin, undoped GaInP/GaAs quantum wells

Mitchel, W.C.; Brown, G.J.
September 1994
Applied Physics Letters;9/19/1994, Vol. 65 Issue 12, p1578
Academic Journal
Examines the transport properties of undoped gallium-indium-phosphorus/gallium arsenide quantum wells. Use of persistent photocurrent in varying quantum well electron concentration; Details on the low temperature mobilities observed in electron concentrations; Comparison with the theory of interface roughness scattering.


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