TITLE

Radiation-induced defects in Czochralski-grown silicon doped with germanium

AUTHOR(S)
Schmalz, K.; Emtsev, V.V.
PUB. DATE
September 1994
SOURCE
Applied Physics Letters;9/19/1994, Vol. 65 Issue 12, p1575
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates radiation-induced defects in Czochralski-grown silicon with germanium (Cz-Si:Ge) content. Details on the formation of vacancy-oxygen complexes; Features of irradiated Cz-Si:Ge; Implication of isoelectronic doping for vacancy-impurity interactions in Cz-Si:Ge.
ACCESSION #
4207677

 

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