In situ spectroscopic ellipsometry of porous silicon layers annealed under ultrahigh vacuum

Larre, A.; Halimaoui, A.
September 1994
Applied Physics Letters;9/19/1994, Vol. 65 Issue 12, p1566
Academic Journal
Details an in situ spectroscopic ellipsometry measurement of porous silicon (PS) layers annealed under ultrahigh vacuum. Impact of hydrogen termination on the optical constants of PS layers; Effects of thermal annealing on the refractive index and absorption coefficient of samples; Factors contributing to changes in the optical properties of the material.


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