TITLE

Enhancement mode metal-semiconductor field effect transistors using homoepitaxial diamonds

AUTHOR(S)
Kawarada, Hiroshi; Aoki, Makoto
PUB. DATE
September 1994
SOURCE
Applied Physics Letters;9/19/1994, Vol. 65 Issue 12, p1563
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the fabrication of metal-semiconductor field effect transistors using homoepitaxial diamonds. Information on the stability of the aluminum Schottky contacts; Advantages of using semiconductive layer on an insulating substrate; Characteristics of the active region on the homoepitaxial layer.
ACCESSION #
4207673

 

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