Increasing short minority carrier diffusion lengths in solar-grade polycrystalline silicon by

Ostapenko, S.S.; Jastrzebski, L.
September 1994
Applied Physics Letters;9/19/1994, Vol. 65 Issue 12, p1555
Academic Journal
Investigates the effect of ultrasound treatment (UST) on the recombination rate in solar-grade polycrystalline silicon for photovoltaic applications. Effects of the UST on the corresponding lifetime of polycrystalline silicon wafers; Information on enhancement location in the wafer regions; Implication of ultrasound vibration for crystallographic defects.


Related Articles

  • Photoconductivity of pyrolytic CdS films alloyed with Cs. Maiorova, T.; Kluyev, V.; Samofalova, T. // Semiconductors;May2011, Vol. 45 Issue 5, p567 

    The investigation of the influence of Cs alloy on recombination processes has been carried out for the pyrolytic CdS films. The effect of photomemory has been observed for such structures, both pure and alloyed. Cs impurity introduction leads to a five- to tenfold photocurrent increase in...

  • Growth kinetics of amorphous interlayers and formation of crystalline silicide phases in... Luo, C.H.; Chen, L.J. // Journal of Applied Physics;10/15/1997, Vol. 82 Issue 8, p3808 

    Investigates the growth kinetics of amorphous interlayer and formation of crystalline silicide phases in ultrahigh vacuum deposited polycrystalline Er and Tb films on Si. Growth of the amorphous interlayer in both Er/Si and Tb/Si systems; Measurement of energy of the linear growth and maximum...

  • Cd self-doping of CdTe polycrystalline films by co-sputtering of CdTe-Cd targets. Picos-Vega, A.; Becerril, M.; Zelaya-Angel, O.; Ramírez-Bon, R.; Espinoza-beltrán, F. J.; González-Hernández, J.; Jiménez-Sandoval, S.; Chao, B. // Journal of Applied Physics;1/15/1998, Vol. 83 Issue 2, p760 

    Studies the growth of Cd self-doping of CdTe polycrystalline films by co-sputtering of CdTe-Cd targets. Information in CdTe; Details on the experiment used in this study; Results of and discussion on the experiment.

  • 2.5 Gbit/s polycrystalline germanium-on-silicon photodetector operating from 1.3 to 1.55 μm. Masini, Gianlorenzo; Colace, Lorenzo; Assanto, Gaetano // Applied Physics Letters;4/14/2003, Vol. 82 Issue 15, p2524 

    We report on a fast polycrystalline germanium-on-silicon heterojunction photodetector for the near-infrared. The device exhibits a pulse response faster than 200 ps, allowing operation at 2.5 Gbit/s as testified by open eye diagrams. This polycrystalline device, with responsivities of 16 and 5...

  • Evaluation of the electrical properties and interfacial reactions for the polycrystalline Si[sub 1-x]Ge[sub x](x=0,0.6)/HfO[sub 2] gate stack. Sung Kwan Kang; Suheun Nam; Byung Gi Min; Seok Woo Nam; Dae-Hong Ko; Mann-Ho Cho // Applied Physics Letters;9/8/2003, Vol. 83 Issue 10, p2004 

    The effect of interfacial reactions on the electrical properties of a polycrystalline (poly) Si[sub 1-x]Ge[sub x]/HfO[sub 2] gate stack were evaluated in terms of annealing conditions and the results were compared with those of a conventional poly-Si/HfO[sub 2] system. In the poly-Si[sub...

  • Interaction of TiSi2 layers with polycrystalline Si. Zheng, L. R.; Hung, L. S.; Feng, S. Q.; Revesz, P.; Mayer, J. W.; Miles, G. // Applied Physics Letters;3/24/1986, Vol. 48 Issue 12, p767 

    Interactions of silicide films with undoped polycrystalline layers of Si grown by chemical vapor deposition at 630 °C were investigated by MeV He ion backscattering spectrometry, scanning electron microscopy, and transmission electron microscopy. For TiSi2, heat treatment in vacuum at...

  • QUANTUM YIELD OF HETEROGENEOUS PHOTOCATALYTIC SYSTEMS: FURTHER APPLICATION OF AN EXPERIMENTAL METHOD FOR DETERMINING THE ABSORBED PHOTON FLOW. Schiavello, M.; Augugliaro, V.; Loddo, V.; Lopez-Munoz, M.J.; Palmisano, L. // Research on Chemical Intermediates;1999, Vol. 25 Issue 2, p213 

    Presents a study which reported additional results obtained with a method already proposed and used to measure absorbed and reflected photons during the occurrence of heterogeneous process carried out in the presence of a polycrystalline semiconductor solid suspended in aqueous solution. ...

  • Light Scattering by Molecular-Organized Films on the Surface of Polycrystalline Gold. Lysenko, S. I.; Snopok, B. A.; Sterligov, V. A.; Kostyukevich, E. V.; Shirshov, Yu. M. // Optics & Spectroscopy;Apr2001, Vol. 90 Issue 4, p606 

    Specific features of the structure of self-assembled layers of dodecanthiol on the surface of polycrystalline films of gold are investigated with the aim of revealing the effect of the substrate relief on the lateral distribution and the predominant orientation of thiol molecules within the...

  • Piezoresistive Effect in Polycrystalline Ferroelectric Semiconductors. Pavlov, A. N.; Raevskii, I. P. // Physics of the Solid State;Sep2002, Vol. 44 Issue 9, p1748 

    The influence of domain reorientations on the piezoresistivity of polycrystalline ferroelectric semiconductors under mechanical stresses is investigated. It is demonstrated that the inclusion of 90� domain reorientations in the analysis of the potential barriers formed at the grain...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics