TITLE

Crystallization at initial stage of low-temperature polycrystalline silicon growth using ZnS

AUTHOR(S)
Matsumoto, T.; Nagahiro, Y.
PUB. DATE
September 1994
SOURCE
Applied Physics Letters;9/19/1994, Vol. 65 Issue 12, p1549
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines a low-temperature growth technique for polycrystalline silicon. Effects of depositing silicon on glass substrates; Information on the preferred orientation of polycrystalline silicon on glass and zinc sulphide buffer layer; Impact of the zinc sulphide buffer layer on the crystallinity of thin silicon films.
ACCESSION #
4207668

 

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