TITLE

Strain relaxation in InAlSb epilayers grown on InSb substrates

AUTHOR(S)
Maigne, P.; Lockwood, D.J.
PUB. DATE
September 1994
SOURCE
Applied Physics Letters;9/19/1994, Vol. 65 Issue 12, p1543
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the evolution of strain relaxation in indium-aluminum-antimony epilayers grown on indium antimonide substrates. Use of x-ray diffraction; Information on the linear relationship between the relaxation coefficient and normalized thickness of layers; Details on the mechanisms for strain relief in the InAlSb/InSb system.
ACCESSION #
4207666

 

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