Strain relaxation in InAlSb epilayers grown on InSb substrates

Maigne, P.; Lockwood, D.J.
September 1994
Applied Physics Letters;9/19/1994, Vol. 65 Issue 12, p1543
Academic Journal
Examines the evolution of strain relaxation in indium-aluminum-antimony epilayers grown on indium antimonide substrates. Use of x-ray diffraction; Information on the linear relationship between the relaxation coefficient and normalized thickness of layers; Details on the mechanisms for strain relief in the InAlSb/InSb system.


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