Selective area growth of heterostructure bipolar transistors by metalorganic molecular beam epitaxy

Hamm, R.A.; Feygenson, A.
August 1992
Applied Physics Letters;8/3/1992, Vol. 61 Issue 5, p592
Academic Journal
Examines the growth of heterostructure bipolar transistors by selective area epitaxy (SAE). Detection of the SAE grown multilayer by scanning electron micrograph; Optimization of chloride molecule etching to improve the quality of the regrown junction; Effect of argon ion sputtering on grown surface.


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