TITLE

Selective area growth of heterostructure bipolar transistors by metalorganic molecular beam epitaxy

AUTHOR(S)
Hamm, R.A.; Feygenson, A.
PUB. DATE
August 1992
SOURCE
Applied Physics Letters;8/3/1992, Vol. 61 Issue 5, p592
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the growth of heterostructure bipolar transistors by selective area epitaxy (SAE). Detection of the SAE grown multilayer by scanning electron micrograph; Optimization of chloride molecule etching to improve the quality of the regrown junction; Effect of argon ion sputtering on grown surface.
ACCESSION #
4207636

 

Related Articles

  • Fabrication and characterization of ZnSe/GaAs heterostructure bipolar transistors grown by.... Glaeser, Annette S.; Merz, James L. // Applied Physics Letters;3/16/1992, Vol. 60 Issue 11, p1345 

    Presents the characterization of zinc selenide/gallium arsenide heterostructure bipolar transistors grown by molecular beam epitaxy. Combination of a valence band offset with a conduction band offset; Determination of common emitter direct current gains; Applicability of the device to the study...

  • High performance InP/InGaAs heterostructure bipolar transistors grown by metalorganic vapor phase epitaxy. Nottenburg, R. N.; Chen, Y. K.; Tanbun-Ek, T.; Logan, R. A.; Humphrey, D. A. // Applied Physics Letters;7/10/1989, Vol. 55 Issue 2, p171 

    We demonstrate high performance InGaAs/InP heterostructure bipolar transistors grown by metalorganic vapor phase epitaxy. A unity current gain cutoff frequency fT=78 GHz and a maximum oscillation frequency fmax=42 GHz are achieved in transistors with emitter size 2.5×11 μm2. Ring...

  • New AlGaAs/GaAs double heterostructure-emitter bipolar transistor prepared by molecular beam.... Wen-Chau Liu; Wen-Shiung Lour // Applied Physics Letters;1/20/1992, Vol. 60 Issue 3, p362 

    Examines the aluminum gallium arsenide/ gallium arsenide double-heterostructure-emitter bipolar transistor (DHEBT) prepared by molecular beam epitaxy. Depiction of the energy band diagrams of the structure; Role of symmetric structure in achieving bi-directional transistor; Elimination of...

  • Carbon doping of Ga[sub 0.47]In[sub 0.53]As using carbotetrabromide by metalorganic molecular.... Hamm, R.A.; Malik, R. // Applied Physics Letters;10/9/1995, Vol. 67 Issue 15, p2226 

    Investigates the carbon doping of Gallium/Indium/Arsenic through carbotetrabromide by metalorganic beam epitaxy for Indium phosphide-based heterostructure bipolar transistor devices. Relationship between Hydrogen incorporation and carbon doping; Impact of temperature on doping; Indicators of a...

  • High gain InGaAs/InP heterostructure bipolar transistors grown by gas source molecular beam epitaxy. Nottenburg, R. N.; Temkin, H.; Panish, M. B.; Hamm, R. A. // Applied Physics Letters;10/27/1986, Vol. 49 Issue 17, p1112 

    The capability for high quality heterostructure bipolar transistors with structures in the InGaAs/InP system has been demonstrated by gas source molecular beam epitaxy. These devices are characterized by high current gain, β∼1100, only weakly dependent on the collector current. The...

  • Characterization of SixGe1-x/Si heterostructures for device applications using spectroscopic ellipsometry. Sieg, R. M.; Alterovitz, S. A.; Croke, E. T.; Harrell, M. J.; Tanner, M.; Wang, K. L.; Mena, R. A.; Young, P. G. // Journal of Applied Physics;7/1/1993, Vol. 74 Issue 1, p586 

    Focuses on a study that characterized Si[subx]Ge[sub1-x]/silicon heterostructures for device applications using spectroscopic ellipsometry (SE). Characterization of heterojunction bipolar transistor material; Preparation of the samples grown on silicon substrates by molecular beam expitaxy;...

  • Barrier and recombination effects in the base-emitter junction of heterostructure bipolar transistors. Tiwari, Sandip; Frank, D. J. // Applied Physics Letters;3/21/1988, Vol. 52 Issue 12, p993 

    We show that high current densities with minimal space charge region recombination current can be obtained by a suitable choice of alloy grading parameters and doping of the junction. It is also shown that compositionally graded, but uniformly doped emitter junctions require a minimum doping...

  • Base doping limits in heterostructure bipolar transistors. Jalali, B.; Nottenburg, R. N.; Levi, A. F. J.; Hamm, R. A.; Panish, M. B.; Sivco, D.; Cho, A. Y. // Applied Physics Letters;4/9/1990, Vol. 56 Issue 15, p1460 

    Heterostructure bipolar transistors are used to experimentally determine band offsets in lattice-matched In0.53Ga0.47As devices. Valence-band offsets of ΔEV=0.24 eV for Al0.48In0.52As/In0.53Ga0.47As and ΔEV=0.34 eV for InP/In0.53Ga0.47As are measured. Because of band filling in the base,...

  • Application of an emitter edge-thinning technique to GaAs/AlGaAs double heterostructure-emitter.... Wen-Chau Liu; Der-Feng Guo // Applied Physics Letters;9/21/1992, Vol. 61 Issue 12, p1441 

    Fabricates gallium arsenide/aluminum gallium arsenide heterostructure-emitter bipolar transistor (HEBT). Effect of double (D) HEBT of reducing the offset voltage; Reduction of the DHEBT by the large spike of the base-collector homojunction; Use of the emitter edge-thinning technique for the...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics