Damage introduction in InP and InGaAs during Ar and H[sub 2] plasma exposure

Pearton, S.J.; Ren, F.
August 1992
Applied Physics Letters;8/3/1992, Vol. 61 Issue 5, p586
Academic Journal
Examines the sheet resistance of indium phosphide (InP) and In[sub 0.53]Ga[sub 0.47]As-doped epitaxial layers exposed to argon or hydrogen ion discharges. Detection of sheet resistance increase after plasma exposure; Dependence of the epitaxial layer sheet resistance on exposure time; Capability of pressure discharges of dry etching semiconductors.


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