TITLE

Damage introduction in InP and InGaAs during Ar and H[sub 2] plasma exposure

AUTHOR(S)
Pearton, S.J.; Ren, F.
PUB. DATE
August 1992
SOURCE
Applied Physics Letters;8/3/1992, Vol. 61 Issue 5, p586
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the sheet resistance of indium phosphide (InP) and In[sub 0.53]Ga[sub 0.47]As-doped epitaxial layers exposed to argon or hydrogen ion discharges. Detection of sheet resistance increase after plasma exposure; Dependence of the epitaxial layer sheet resistance on exposure time; Capability of pressure discharges of dry etching semiconductors.
ACCESSION #
4207634

 

Related Articles

  • InGaAs/InP and InAsP/InP quantum well structures on GaAs(100) with a linearly graded InGaP.... Chin, T.P.; Hou, H.Q. // Applied Physics Letters;4/11/1994, Vol. 64 Issue 15, p2001 

    Examines the efficacy of linearly graded In[sub x]Ga[sub 1-x]P buffer layer in obtaining quality indium phosphide (InP) on GaAs(100). Advantages of a buffer layer; Use of compound transparency and linear grading in InP-based and GaAs-based device integration; Emphasis on dimensional growth mode...

  • As capture and the growth of ultrathin InAs layers on InP. Aspnes, D.E.; Tamargo, M.C. // Applied Physics Letters;6/13/1994, Vol. 64 Issue 24, p3279 

    Investigates the capture of arsenic (As) and growth of ultrathin indium arsenide layers on indium phosphide (InP) surfaces. Stability of InP surfaces below 520 degree Celsius; Removal of accumulated As by exposure to phosphorus (P); Occurrence of As-P exchange in the outermost layer.

  • Influence of surface morphology on ordered GainP structures. Nasi, L.; Salviati, G.; Mazzer, M.; Zanotti-Fregonara, C. // Applied Physics Letters;6/3/1996, Vol. 68 Issue 23, p3263 

    Investigates the influence of surface morphology on the distribution of ordered domains in GaInP layers. Increase in structural homogeneity of ordered domains; Correlation between cathodoluminescence emission from ordered regions; Changes in surface step distribution direction.

  • Epitaxial growth of cadmium sulfide layers on indium phosphide from aqueous ammonia solutions. Lincot, Daniel; Ortega-Borges, Raul; Froment, Michel // Applied Physics Letters;1/31/1994, Vol. 64 Issue 5, p569 

    Demonstrates the epitaxial growth of cadmium sulfide layers on indium phosphide monocrystals using chemical deposition from ammonia-thiourea aqueous solutions. Use of electron diffraction techniques to determine epitaxial relations; Link between temperature and epitaxy; Temperature range of...

  • Novel technique for p-type nitrogen doped ZnSe epitaxial layers. Taskar, N.R.; Khan, B.A.; Dorman, D.R.; Shahzad, K. // Applied Physics Letters;1/18/1993, Vol. 62 Issue 3, p270 

    Presents a technique to obtain p-type zinc selenide layers doped with nitrogen. Ways to enhance nitrogen acceptor activation; Fabrication of p-n junction diodes; Use of p-type layers for light emitting diode applications.

  • Reduction of Be out-diffusion from heavily doped GaAs:Be layers by pseudomorphic.... Zhang, K.; Chen, Y.C. // Applied Physics Letters;8/15/1994, Vol. 65 Issue 7, p872 

    Evaluates the reduction of beryllium (Be) out-diffusion from heavily doped gallium arsenide:Be layers by pseudomorphic In[sub x]Ga[sub 1-x]As barrier layers. Application of ion mass spectrometry; Exposure of samples to rapid thermal annealing; Comparison of Be diffusion beyond InGaAs layers in...

  • Stoichiometry-dependent deep levels in p-type InP. Nishizawa, Jun-ichi; Kim, Kiyoon; Oyama, Yutaka; Suto, Ken // Journal of Applied Physics;4/1/1997, Vol. 81 Issue 7, p3151 

    Examines the stoichiometry-dependent deep levels in p-type indium phosphide crystals doped with zinc involving photocapacitance measurement. Level density and energy levels; Ion density; Optical transition mechanism.

  • Self-aligned buried-heterostructure lasers grown entirely by metalorganic vapor phase epitaxy. Kondo, Y.; Sato, K.; Yamamoto, M. // Applied Physics Letters;3/15/1993, Vol. 62 Issue 11, p1188 

    Investigates the effects of neutron-type dopant on indium phosphide (InP) embedding regrowth by metalorganic vapor phase epitaxy (MOVPE). Suppression of growth in the InP layer under certain selenide conditions; Fabrication of heterostructure laser diode using MOVPE technique; Level of threshold...

  • Investigations of InP:Ti grown by metalorganic vapor phase epitaxy. Ottenwalder, D.; Scholz, F. // Applied Physics Letters;3/9/1992, Vol. 60 Issue 10, p1259 

    Examines the epitaxial growth of titanium doped indium phosphide layers. Investigation of the internal three dimensional-transitions of Ti[sub 3+]; Confirmation on the substitutional incorporation of titanium in indium phosphide; Limitation of the electrically active titanium concentration.

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics