TITLE

Accurate determination of effective quantum well thickness: Infrared absorption by

AUTHOR(S)
Yang, M.J.; Wagner, R.J.
PUB. DATE
August 1992
SOURCE
Applied Physics Letters;8/3/1992, Vol. 61 Issue 5, p583
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the infrared transmission spectra of aluminum antimonide (AlSb)/indium Sb/AlSb single quantum well thickness. Growth of the samples on gallium arsenide substrates; Independence of interbranch phonon scattering from well thickness; Effect of phonon lifetime on quantum well thickness.
ACCESSION #
4207633

 

Related Articles

  • Practical formulations of the electron capture rate in quantum wells by phonon emission at low carrier density. Vallone, Marco // Journal of Applied Physics;6/15/2002, Vol. 91 Issue 12, p9848 

    In this article the Green's functions formalism is exploited to describe the coupled phonon-plasmon system in the plasmon pole approximation for the longitudinal dielectric constant, for two-dimensional quantum wells. Electron capture time in quantum wells is obtained in a closed form,...

  • Dielectric screening effects on electron transport in Ga0.51 In0.49P/Inx Ga1-xAs/GaAs quantum wells. Besikci, C.; Bakir, A. T.; Tanatar, B. // Journal of Applied Physics;8/1/2000, Vol. 88 Issue 3, p1504 

    Investigates the effects of dielectric screening on the two dimensional polar optical phonon scattering and on electron transport in Ga0.51In0.49P/InxGa1-xAs/GaAs quantum wells. Quantum well electronic states; Two dimensional optical phonon scattering rates; Effects of screening on transport...

  • Ultrafast electron dynamics of intersubband excitation concerning cross-phase modulation in an InGaAs/AlAs/AlAsSb coupled double quantum well. Ogasawara, Takeshi; Gozu, Shinichiro; Mozume, Teruo; Akita, Kazumichi; Akimoto, Ryoichi; Kuwatsuka, Haruhiko; Hasama, Toshifumi; Ishikawa, Hiroshi // Applied Physics Letters;6/20/2011, Vol. 98 Issue 25, p251104 

    The ultrafast electron dynamics accompanying intersubband excitation in an InGaAs/AlAs/AlAsSb double quantum well has been investigated by femtosecond pump-probe spectroscopy. The photoinduced changes in the refractive index that causes cross-phase modulation is dominated by a decreased number...

  • Escape from quantum wells via polar optical phonon scattering. Liang, Lie; Lent, Craig S. // Journal of Applied Physics;8/15/1990, Vol. 68 Issue 4, p1741 

    Investigates the escape of electrons from quantum wells via polar optical phonon scattering. Calculation of electron escape rates that are confined in a quantum well; Analysis of experimental results leading to the development of a scattering theory; Information on the directional dependence of...

  • Nonlinear spectroscopy of InGaAs/InAlAs multiple quantum well structures. Weiner, J. S.; Pearson, D. B.; Miller, D. A. B.; Chemla, D. S.; Sivco, D.; Cho, A. Y. // Applied Physics Letters;9/1/1986, Vol. 49 Issue 9, p531 

    The first investigation of nonlinear absorption in InGaAs/InAlAs multiple quantum wells using picosecond and cw infrared lasers is presented. The nonlinearity is demonstrated to be due to plasma-induced excitonic bleaching. The measured saturation densities agree with those predicted by theory.

  • Optical gain of interdiffused GaInNAs/GaAs quantum wells. Chan, M.C.Y.; Surya, C.; Wai, P.K.A. // Applied Physics A: Materials Science & Processing;2002, Vol. 75 Issue 5, p573 

    A self-consistent model for the band structure and optical gain spectra in interdiffused Ga[sub x] In[sub 1-x] N[sub 0.04] As[sub 0.96] /GaAs single quantum wells are studied theoretically using Fick�s Law and the Fermi Golden Rule. Due to quantum-well interdiffusion, the peak gain and its...

  • Wavelength-dependent optical degradation of green II-VI laser diodes. Vogelgesang, R.; Liang, J.J.; Wagner, V.; Lugauer, H.J.; Geurts, J.; Waag, A.; Landwehr, G. // Applied Physics Letters;9/6/1999, Vol. 75 Issue 10, p1351 

    Reports on optical degradation studies on BeMgZnSe separate confinement quantum well laser structures for the blue-green spectral region. Wavelength of the incident light; Dominant degradation mechanism initiated when electron hole pairs are created in the quantum well.

  • Characterization of piezoelectric (111)B InGaAs/GaAs p-i-n quantum well structures using photoreflectance spectroscopy. Chan, C. H.; Chen, M. C.; Lin, H. H.; Chen, Y. F.; Jan, G. J.; Chen, Y. H. // Applied Physics Letters;3/9/1998, Vol. 72 Issue 10 

    Strained-layer (111)B In[sub 0.2]Ga[sub 0.8]As/GaAs p-i-n quantum well structures grown with exciton transitions well resolved at room temperature have been studied by photoreflectance spectroscopy. Using the reduced mass deduced from experiments, the built-in electric field in the barrier...

  • Electron energy levels in a quantum well within an in-plane magnetic field. Lee, H. R.; Oh, H. G.; George, Thomas F.; Um, C. I. // Journal of Applied Physics;9/15/1989, Vol. 66 Issue 6, p2442 

    Deals with a study of the numerical solutions for the energy spectrum of electrons in a quantum well with a finite potential height V[sub0] and well width W comparable to the magnetic length. Calculation of the eigenenergy spectrum of an infinite potential well; Results and discussion.

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics