Thermal wave measurement of ion implanted semiconductors in the mirage effect geometry

Glazov, A.L.; Muratikov, K.L.
August 1992
Applied Physics Letters;8/3/1992, Vol. 61 Issue 5, p569
Academic Journal
Analyzes the effect of ion implant processes on thermal wave (TW) signals from semiconductors. Use of interferometric detection of a TW signal; Dependence of the signal amplitude on ion dose; Influence of pump radiation interference on TW signal.


Related Articles

  • Effect of in situ photoexcitation of n-type Si as a result of ion implantation at low doses on the formation of radiation defects. Barabanenkov, M. Yu.; Leonov, A. V.; Mordkovich, V. N.; Omel�yanovskaya, N. M. // Semiconductors;May99, Vol. 33 Issue 5, p504 

    The effect of in situ photoexcitation of the electronic subsystem of a semiconductor as a result of implantation of low ion doses on the formation of complexes of radiation defects in n-type Si is investigated by the DLTS method. The n-type Si samples were irradiated with 150-keV O[sup +, sub 2]...

  • Indirectly heated cathode arc discharge source for ion implantation of semiconductors Horsky, Thomas N. // Review of Scientific Instruments;Apr98, Vol. 69 Issue 4, p1688 

    Describes an indirectly heated cathode (IHC) source for ion implantation of semiconductors. Description of the ion source; Performance of the IHC source; Similarity of the design with the reflexgeometry Bernas source; Range of the cathode source lifetime.

  • Highly thermally stable electrical compensation in oxygen implanted p-InAlAs. Krauz, Ph.; Rao, E.V.K.; Thibierge, H.; Harmand, J.C. // Applied Physics Letters;2/22/1993, Vol. 62 Issue 8, p867 

    Examines the electrical compensation induced by oxygen ion implants in Be doped p-type InAlAs epilayers. Effects of hot implant and thermal anneal applications on the epilayers; Use of molecular beam epitaxy technique; Involvement of oxygen atoms in the compensation mechanism.

  • Local electron concentration-dependent electronic stopping power model for Monte Carlo simulation of low-energy ion implantation in silicon. Klein, K. M.; Park, C.; Tasch, A. F. // Applied Physics Letters;12/17/1990, Vol. 57 Issue 25, p2701 

    We have developed a new electronic (inelastic) stopping model for low-energy implanted ions which explicitly accounts for the effect of the local variation of the electron density between the lattice atoms in the silicon crystal target material on the amount and rate of energy loss due to...

  • Reduction of secondary defect formation in MeV B+ ion-implanted Si (100). Lu, W. X.; Qian, Y. H.; Tian, R. H.; Wang, Z. L.; Schreutelkamp, R. J.; Liefting, J. R.; Saris, F. W. // Applied Physics Letters;10/30/1989, Vol. 55 Issue 18, p1838 

    MeV ion implantation in Si above a dose of 1014/cm2 leads to secondary defect formation in a buried layer, which is rather stable. Annealing of Si(100) implanted with 2.0 MeV B+ ions to a dose of 2.2×1014/cm2 has been investigated by means of cross-sectional transmission electron microscopy....

  • Batch size effects on 300-mm ion implant productivity. Current, Michael I. // Solid State Technology;Sep96, Vol. 39 Issue 9, p192 

    Discusses the impact of the number of wafers in a transfer lot, system geometry and batch size on 300 millimeter ion implant productivity. Impact of the use of dummy wafers on implant operations; Three cases where no dummies are needed in routine operations; Impact of the choice of cassette lot...

  • A new era for high-current, low-energy ion implantation. Parrill, Thomas M.; Ameen, Michael S.; Graf, Michael; Mazzola, Richard // Solid State Technology;Nov2000, Vol. 43 Issue 11, p103 

    Examines basic issues associated with delivering low-energy ions to silicon wafers. Details on the delivery and control of low-energy ions; Information on the process control in ion implantation; Conclusion.

  • Japanese companies design multifunction minifab tools. Okumura, Katsuya; Mikata, Yu-ichi; Suguro, Kyoichi; Tsunashima, Yoshitaka; Shimazaki, Ayako // Solid State Technology;Jun2001, Vol. 44 Issue 6, p83 

    Focuses on a plan for the technologies and equipment required for a semiconductor minifab. Capabilities of the multifunctional thermal processing; Functions of stencil mask ion implantation in reducing process time and cost of complex system chips; Way to protect the wafers from contamination.

  • Novel annealing scheme for fabricating high-quality Ti-silicided shallow n[sup +]p junction by.... Juang, M.H.; Cheng, H.C. // Applied Physics Letters;3/30/1992, Vol. 60 Issue 13, p1579 

    Describes the fabrication of titanium (Ti)-silicided shallow n[sup +]p junction by phosphorus ion implantation in amorphous-silicon/Ti bilayer thin film. Application of rapid thermal annealing with post-conventional furnace annealing treatment; Facilitation of silicidation and damage...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics