Influence of silicon on the properties of reactively sputtered hydrogenated amorphous germanium

Drusedau, T.; Schroder, B.
August 1992
Applied Physics Letters;8/3/1992, Vol. 61 Issue 5, p566
Academic Journal
Examines the effect of silicon (Si) on the properties of hydrogenated amorphous germanium (a-Ge:H) films. Dependence of silicon content on silane pressure; Evidence of the deposition of a-Si:H from magnetron sputtering and glow discharge; Adhesion of a-Ge[sub 1-x]Si[sub x]:H films to c-Si substrates.


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