TITLE

Direct evidence for the amorphous silicon phase in visible photoluminescent porous silicon

AUTHOR(S)
Perez, J.M.; Villalobos, J.
PUB. DATE
August 1992
SOURCE
Applied Physics Letters;8/3/1992, Vol. 61 Issue 5, p563
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Provides evidence for the presence of amorphous silicon phase in visible photoluminescent (PL) porous silicon (PS). Use of micro-Raman spectroscopy; Absence of Raman line on PS with visible PL; Effect of hydrogen atoms on visible PL.
ACCESSION #
4207626

 

Related Articles

  • Raman investigation of light-emitting porous silicon layers: Estimate of characteristic crystallite dimensions. Gregora, I.; Champagnon, B.; Halimaoui, A. // Journal of Applied Physics;3/15/1994, Vol. 75 Issue 6, p3034 

    Deals with a study which conducted a Raman spectroscopy investigation on light-emitting porous silicon layers prepared on boron-doped substrates. Experimental procedures; Photoluminescence of silicon layers; Features of porous silicon; Discussion and conclusions.

  • Influence of crystallite size distribution on the micro-Raman analysis of porous Si. Islam, Md. N.; Kumar, Satyendra // Applied Physics Letters;2/5/2001, Vol. 78 Issue 6, p715 

    First-order Raman spectra from nanocrystalline semiconductors reflect the influence of crystallite sizes on the Raman shifts and line shapes. A Gaussian distribution in crystallite sizes is explicitly included to calculate the Raman spectra of porous silicon. Several porous-silicon samples were...

  • Fabrication and characterization of porous silicon layers for applications in optoelectronics. Dubey, R. S.; Gautam, D. K. // Optical & Quantum Electronics;Feb2009, Vol. 41 Issue 3, p189 

    In the present paper, several samples of porous silicon monolayers and multilayers were prepared at different anodization conditions with fixed HF concentration. The room temperature photoluminescence wavelength observed to be increased with increased etching time and current density...

  • HIGHLY SENSITIVE POROUS SILICON SENSOR: DETECTION OF ORGANIC VAPOURS USING PHOTOLUMINESCENCE QUENCHING TECHNIQUE. Dhanekar, Saakshi; Islam, S. S.; Islam, T. // International Journal on Smart Sensing & Intelligent Systems;Mar2010, Vol. 3 Issue 1, p1 

    Porous silicon based sensors were tested in the presence of various linear aliphatic alcohols (methanol to n-hexanol) and water in the range of 10-100 ppm by photoluminescence quenching technique. An increasing trend in the degree of quenching was observed with the chain length of alcohols while...

  • Effect of HF Concentration on Physical and Electronic Properties of Electrochemically Formed Nanoporous Silicon. Kumar, Pushpendra; Lemmens, Peter; Ghosh, Manash; Ludwig, Frank; Schilling, Meinhard // Journal of Nanomaterials;2009, Special section p1 

    The most common fabrication technique of porous silicon (PS) is electrochemical etching of a crystalline silicon wafer in a hydrofluoric (HF) acid-based solution. The electrochemical process allows for precise control of the properties of PS such as thickness of the porous layer, porosity, and...

  • Raman and Photoluminescence Spectroscopy Studies On Porous Silicon Nanostructures. Asli, N. A.; Yusop, S. F. M.; Rusop, M.; Abdullah, S. // AIP Conference Proceedings;5/25/2011, Vol. 1341 Issue 1, p96 

    In this work, the study of photoluminescence (PL) and Raman spectroscopy of porous silicon nanostructures (NPSi) have been carried out. The samples were prepared by photo-electrochemical anodization method using p-type silicon wafer based. Photoluminescence measurement of NPSi shows increase of...

  • Raman scattering from H or O terminated porous Si. Tsang, J.C.; Tischler, M.A. // Applied Physics Letters;5/4/1992, Vol. 60 Issue 18, p2279 

    Examines the dependence of the crystalline structure of porous silicon on the bonding of surface silicon atoms to either hydrogen or oxygen by Raman spectroscopy. Identification of the character of terminated porous silicon; Influence of the bonding of silicon atom by oxygen on the surfaces of...

  • Raman analysis of light-emitting porous silicon. Zhifeng Sui; Leong, Patrick P. // Applied Physics Letters;4/27/1992, Vol. 60 Issue 17, p2086 

    Analyzes light-emitting porous silicon using the Raman technique. Width of the spectrum peaks; Use of the phonon confinement model; Diameter of the porous silicon; Employment of polarization configurations for structure identification.

  • Anomalous polarization of Raman scattering spectra from porous silicon. Kompan, M. E.; Kulik, V. B.; Novak, I. I.; Salonen, J.; Subashiev, A. V. // JETP Letters;1/25/98, Vol. 67 Issue 2, p106 

    A violation of the polarization selection rules for Raman scattering is observed in porous silicon. This effect is caused by a weak disorientation of the quasi-one-dimensional silicon wires, with the crystal structure of the wires themselves and the macroscopic homogeneity of the material in...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics