TITLE

Surface segregation of In atoms during molecular beam epitaxy and its influence on the energy

AUTHOR(S)
Muraki, K.; Fukatsu, S.
PUB. DATE
August 1992
SOURCE
Applied Physics Letters;8/3/1992, Vol. 61 Issue 5, p557
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the surface segregation of indium (In) atoms during molecular beam epitaxy. Influence of In surface segregation on the energy levels of indium gallium arsenide (InGaAs)/GaAS quantum wells; Dependence of In surface segregation on growth conditions; Effect of In desorption on In surface segregation.
ACCESSION #
4207624

 

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