Surface segregation of In atoms during molecular beam epitaxy and its influence on the energy

Muraki, K.; Fukatsu, S.
August 1992
Applied Physics Letters;8/3/1992, Vol. 61 Issue 5, p557
Academic Journal
Examines the surface segregation of indium (In) atoms during molecular beam epitaxy. Influence of In surface segregation on the energy levels of indium gallium arsenide (InGaAs)/GaAS quantum wells; Dependence of In surface segregation on growth conditions; Effect of In desorption on In surface segregation.


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