TITLE

Point defects in Si thin films grown by molecular beam epitaxy

AUTHOR(S)
Gossmann, H.-J.; Asoka-Kumar, P.
PUB. DATE
August 1992
SOURCE
Applied Physics Letters;8/3/1992, Vol. 61 Issue 5, p540
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the presence of point defects in silicon (Si) epitaxial films grown by low-temperature molecular beam epitaxy (LT-MBE). Use positron annihilation spectroscopy; Influence of temperature rapid thermal anneal on the crystalline quality of the film; Observation of thick film defects for temperature equal to 450 degree Celsius.
ACCESSION #
4207618

 

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