Point defects in Si thin films grown by molecular beam epitaxy

Gossmann, H.-J.; Asoka-Kumar, P.
August 1992
Applied Physics Letters;8/3/1992, Vol. 61 Issue 5, p540
Academic Journal
Examines the presence of point defects in silicon (Si) epitaxial films grown by low-temperature molecular beam epitaxy (LT-MBE). Use positron annihilation spectroscopy; Influence of temperature rapid thermal anneal on the crystalline quality of the film; Observation of thick film defects for temperature equal to 450 degree Celsius.


Related Articles

  • Deep level defects in n-type GaN grown by molecular beam epitaxy. Wang, C. D.; Yu, L. S.; Lau, S. S.; Yu, E. T.; Kim, W.; Botchkarev, A. E.; Morkoc¸, H. // Applied Physics Letters;3/9/1998, Vol. 72 Issue 10, p0 

    Deep-level transient spectroscopy has been used to characterize electronic defects in n-type GaN grown by reactive molecular-beam epitaxy. Five deep-level electronic defects were observed, with activation energies E[sub 1]=0.234±0.006, E[sub 2]=0.578±0.006, E[sub 3]=0.657±0.031, E[sub...

  • Ion channeling analysis of a Si1-xGex(As)/Si strained layer. Moore, J. A.; Lennard, W. N.; Massoumi, G. R.; Jackman, T. E.; Baribeau, J-M.; Jackman, J. A. // Applied Physics Letters;6/19/1989, Vol. 54 Issue 25, p2571 

    A strained layer of Si1-x Gex (As)/Si has been grown by molecular beam epitaxy (MBE) with the As dopant introduced by 1 keV ion implantation during growth. Analysis of the layer was made using secondary-ion mass spectrometry (SIMS), Rutherford backscattering (RBS), and proton-induced x-ray...

  • Deposition and doping of silicon carbide by gas-source molecular beam epitaxy. Kern, R.S.; Davis, R.F. // Applied Physics Letters;9/8/1997, Vol. 71 Issue 10, p1356 

    Examines the deposition and doping of silicon carbide semiconductor thin films. Application of gas-source molecular beam epitaxy in semiconductor doping; Effect of gas flow ratio changes on nitrogen impurity levels; Achievement of in situ doping through nitrogen and aluminum introduction into...

  • Electrical properties of low-temperature-growth CaF[sub 2] on Si(111). Cho, C.-C.; Kim, T.S. // Applied Physics Letters;1/20/1992, Vol. 60 Issue 3, p338 

    Examines the growth of low temperature-epitaxial calcium fluoride (CaF[sub 2]) films on silicon using molecular beam epitaxy. Observation of x-ray rocking curves of CaF[sub 2] in CaF[sub 2]/Si samples; Influence of thermal history on CaF[sub 2] capacitor; Predominance of Ca-Si bonds in CaF[sub...

  • New approach to growth of high-quality GaAs layers on Si substrates. Varrio, J.; Asonen, H.; Salokatve, A.; Pessa, M.; Rauhala, E.; Keinonen, J. // Applied Physics Letters;11/30/1987, Vol. 51 Issue 22, p1801 

    GaAs films were grown by molecular beam epitaxy (MBE) on Si (100) substrates using a two-step growth process of a 300 °C GaAs buffer layer followed by a 600 °C device layer. The films were examined by Rutherford backscattering and x-ray diffraction methods. A significant reduction in the...

  • Virtual-surfactant epitaxy of strained InAs/Al[sub 0.48]In[sub 0.52]As quantum wells. Tournie, Eric; Ploog, Klaus H. // Applied Physics Letters;2/22/1993, Vol. 62 Issue 8, p858 

    Examines the molecular beam epitaxy growth of strained indium arsenide film embedded in an Al[sub 0.48]In[sub 0.52]As matrix grown on InP substrate. Use of reflection high-energy electron diffraction; Regulation of growth condition by a 'virtual-surfactant'; Alternative route for strained...

  • Growth and properties of (Ga,Mn)As films with high Mn concentration. Takamura, K.; Matsukura, F.; Ohno, Y.; Ohno, H. // Journal of Applied Physics;6/1/2001, Vol. 89 Issue 11, p7024 

    (Ga, Mn)As films with high nominal Mn concentration (0

  • Deep level defect study of molecular beam epitaxially grown silicon films. Xie, Y. H.; Wu, Y. Y.; Wang, K. L. // Applied Physics Letters;1/27/1986, Vol. 48 Issue 4, p287 

    We report the result of the study on the electrically active deep level defects in Si films grown by molecular beam epitaxy. A deep level defect at Ec-0.58 eV is consistently obtained for samples grown on substrates with purposely contaminated surfaces. The observed defects are all located...

  • Properties of Si layers grown by molecular beam epitaxy at very low temperatures. Jorke, H.; Kibbel, H.; Schäffler, F.; Casel, A.; Herzog, H.-J.; Kasper, E. // Applied Physics Letters;2/27/1989, Vol. 54 Issue 9, p819 

    (100) silicon molecular beam epitaxy films with etch pit densities below 103 cm-2 and χmin values of 3.3–3.9% were grown at very low temperatures (Ts =250–350 °C). Although dopant activation is significantly below unity at n=1018 Sb atoms/cm3 Hall mobilities of homogeneously...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics