Low resistance tungsten films on GaAs deposited by means of rapid thermal low pressure chemical

Katz, A.; Feingold, A.
August 1992
Applied Physics Letters;8/3/1992, Vol. 61 Issue 5, p525
Academic Journal
Examines the deposition of tungsten films on gallium arsenide (GaAs) substrates by chemical vapor deposition. Analyses of the film properties by transmission electron microscopy; Use of deposited films as electrical contacts; Effect of post-deposition sintering on film resistivity.


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