TITLE

Low resistance tungsten films on GaAs deposited by means of rapid thermal low pressure chemical

AUTHOR(S)
Katz, A.; Feingold, A.
PUB. DATE
August 1992
SOURCE
Applied Physics Letters;8/3/1992, Vol. 61 Issue 5, p525
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the deposition of tungsten films on gallium arsenide (GaAs) substrates by chemical vapor deposition. Analyses of the film properties by transmission electron microscopy; Use of deposited films as electrical contacts; Effect of post-deposition sintering on film resistivity.
ACCESSION #
4207613

 

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