TITLE

Normal incidence intersubband optical transition in GaSb/InAs superlattices

AUTHOR(S)
Chen, H.H.; Houng, M.P.
PUB. DATE
August 1992
SOURCE
Applied Physics Letters;8/3/1992, Vol. 61 Issue 5, p509
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the incidence of intersubband optical transition in gallium antimonide (GaSb)/indium arsenide (InAs) superlattices using a bond-orbital model. Effect of hole concentration in GaSb layers on (GaSb)[sub 10](InAs)[sub 10] absorption coefficient; Possibility of using InAs/GaSb superlattice as a normal-incidence infrared reflector.
ACCESSION #
4207607

 

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