Normal incidence intersubband optical transition in GaSb/InAs superlattices

Chen, H.H.; Houng, M.P.
August 1992
Applied Physics Letters;8/3/1992, Vol. 61 Issue 5, p509
Academic Journal
Examines the incidence of intersubband optical transition in gallium antimonide (GaSb)/indium arsenide (InAs) superlattices using a bond-orbital model. Effect of hole concentration in GaSb layers on (GaSb)[sub 10](InAs)[sub 10] absorption coefficient; Possibility of using InAs/GaSb superlattice as a normal-incidence infrared reflector.


Related Articles

  • Hole perpendicular transport in GaAs-AlGaAs superlattices. Bing Dong; Lei, X.L. // Applied Physics Letters;2/17/1997, Vol. 70 Issue 7, p862 

    Investigates the hole perpendicular transport properties in semiconductor superlattices (SL) using the Lei-Ting balance equation theory. Effects of the heavy-hole-light-hole (hh-lh) mixing; Causes of the hole energy spectrum; Role of the hh-lh mixing in linear and nonlinear hole transport in SL.

  • Role of optical properties of metallic mirrors in microcavity structures. Becker, H.; Burns, S.E. // Journal of Applied Physics;3/15/1997, Vol. 81 Issue 6, p2825 

    Studies the effect of metal mirror properties on the emission characteristics of planar microcavities. Resonant modes of microcavity; On-axis measurements; Off-axis measurements.

  • Long term storage of inversion holes at a superlattice/GaAs interface. Melloch, M. R.; Qian, Q-D.; Cooper, J. A. // Applied Physics Letters;11/24/1986, Vol. 49 Issue 21, p1471 

    We report an investigation of the long term retention characteristic of a hole inversion layer at the interface between an AlAs/GaAs superlattice and GaAs in the dark. The retention time constant at 77 K is measured to be 34 h. From the temperature dependence of the retention time constant, an...

  • Wave packets in a semiconductor superlattice. Biermann, Mark L.; Stroud Jr., C.R. // Applied Physics Letters;5/20/1991, Vol. 58 Issue 20, p2279 

    Studies hole wave packets in a GaAs, Al[sub 0.3]Ga[sub 0.7]As superlattice. Formation of the wave packet by short laser pulse excitation; Time-dependent nature of the wave packet; Use of the wave packet formalism to study coherent hole dynamics.

  • Amplification of bulk and surface plasmons in semiconductor superlattices. Hawrylak, Pawel; Quinn, John J. // Applied Physics Letters;8/4/1986, Vol. 49 Issue 5, p280 

    We study the amplification of bulk and surface plasmons in a type II semiconductor superlattice, which consists of a semi-infinite array of spatially separated electron and hole layers. Amplification is achieved by imposing an external drift velocity on the electrons. For drift velocities...

  • Hole transport through minibands of a symmetrically strained GexSi1-x/Si superlattice. Park, J. S.; Karunasiri, R. P. G.; Wang, K. L.; Rhee, S. S.; Chern, C. H. // Applied Physics Letters;4/17/1989, Vol. 54 Issue 16, p1564 

    The hole transport through the minibands of a GexSi1-x/Si superlattice is observed for the first time. The symmetrically strained, short-period GexSi1-x/Si supperlattice is grown on a Gex/2Si1-x/2 /Si buffer layer. The current-voltage and conductance-voltage characteristics show two peaks which...

  • Diffusion dynamics of holes in InxGa1-xAs/GaAs strained-layer superlattices. Gourley, P. L.; Wiczer, J. J.; Zipperian, T. E.; Dawson, L. R. // Applied Physics Letters;7/14/1986, Vol. 49 Issue 2, p100 

    We investigate the diffusion dynamics of minority-carrier holes in In0.2Ga0.8As/GaAs strained-layer superlattices by measuring their diffusion lengths, both parallel and perpendicular to the layers, and recombination lifetime for temperatures between 78 and 300 K. From these data we determine a...

  • Electronic states in ZnSe/ZnTe type-II superlattice studied by capacitance transient spectroscopy. Wang, S.Q.; Lu, F.; Jung, H. D.; Song, C. D.; Zhu, Z. Q.; Okushi, H.; Cavenett, B. C.; Yao, T. // Journal of Applied Physics;10/1/1997, Vol. 82 Issue 7, p3402 

    Studies the electronic states in N-doped ZnSe/ZnTe type-II superlattice by deep level transient spectroscopy and isothermal capacitance transient spectroscopy. Investigation of the capture and emission processes of holes; Determination of the activation energy for the hole emission from the...

  • Optically active erbium–oxygen complexes in GaAs. Coutinho, J.; Jones, R.; Shaw, M. J.; Briddon, P. R.; Öberg, S. // Applied Physics Letters;3/8/2004, Vol. 84 Issue 10, p1683 

    Density functional modeling of Er and Er–O complexes in GaAs show that Er impurities at the Ga site are not efficient channels for exciton recombination, but decorative O atoms play crucial roles in inhibiting Er precipitation and in creating the necessary conditions for electron-hole...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics