TITLE

Temperature-dependent generation of misfit dislocations in In[sub 0.2]Ga[sub 0.8]As/GaAs single

AUTHOR(S)
Zou, J.; Cockayne, D.J.H.
PUB. DATE
January 1996
SOURCE
Applied Physics Letters;1/29/1996, Vol. 68 Issue 5, p673
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the onset of misfit dislocation generation in semiconductor heterostructures by transmission electron microscopy. Application of the liftoff technique; Use of postgrowth annealing to determine the equilibrium critical thickness of misfit dislocation; Effects of elevated temperature on metastable dislocation structures.
ACCESSION #
4204253

 

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