TITLE

Comparison of triethylaluminum, triethylgallium, triethylindium, and triethylantimony on GaAs (100)

AUTHOR(S)
Heitzinger, John M.; Jackson, M.S.
PUB. DATE
January 1995
SOURCE
Applied Physics Letters;1/16/1995, Vol. 66 Issue 3, p352
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the reactivity of triethylaluminum, triethylgallium, triethylindium, and triethylantimony on gallium arsenide by thermal desorption spectroscopy. Direction of the experiment in ultrahigh vacuum surface; Indication of identical rate limiting step for ethyl group elimination; Implication of results for heteroepitaxial film growth.
ACCESSION #
4203916

 

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