Comparison of triethylaluminum, triethylgallium, triethylindium, and triethylantimony on GaAs (100)

Heitzinger, John M.; Jackson, M.S.
January 1995
Applied Physics Letters;1/16/1995, Vol. 66 Issue 3, p352
Academic Journal
Examines the reactivity of triethylaluminum, triethylgallium, triethylindium, and triethylantimony on gallium arsenide by thermal desorption spectroscopy. Direction of the experiment in ultrahigh vacuum surface; Indication of identical rate limiting step for ethyl group elimination; Implication of results for heteroepitaxial film growth.


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